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參數(shù)資料
| 型號(hào)： | BLW87 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | VHF power transistor |
| 中文描述： | VHF BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | CERAMIC, SOT-123A, 4 PIN |
| 文件頁數(shù)： | 2/11頁 |
| 文件大小： | 81K |
| 代理商： | BLW87 |
August 1986
2
Philips Semiconductors
Product specification
VHF power transistor
BLW87
DESCRIPTION
N-P-N silicon planar epitaxial
transistor intended for use in class-A,
B and C operated mobile h.f. and
v.h.f. transmitters with a nominal
supply voltage of 13,5 V. The
transistor is resistance stabilized and
is guaranteed to withstand severe
load mismatch conditions with a
supply over-voltage to 16,5 V.
It has a 3/8" flange envelope with a
ceramic cap. All leads are isolated
from the flange.
QUICK REFERENCE DATA
R.F. performance up to T
h
= 25
°
C in an unneutralized common-emitter class-B circuit
MODE OF OPERATION
V
CE
V
f
MHz
P
L
W
G
p
dB
>
6
η
%
z
i
Y
L
mS
c.w.
13,5
175
25
>
70
1,6
+
j1,4
210
+
j5,5
PIN CONFIGURATION
handbook, halfpage
e
c
b
MBB012
Fig.1 Simplified outline and symbol.
halfpage
1
2
3
4
MSB057
PINNING - SOT123
PIN
DESCRIPTION
1
2
3
4
collector
emitter
base
emitter
PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely
safe provided that the BeO disc is not damaged.
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