參數(shù)資料
型號(hào): BLW85
廠商: NXP SEMICONDUCTORS
元件分類: 功率晶體管
英文描述: HF/VHF power transistor
中文描述: VHF BAND, Si, NPN, RF POWER TRANSISTOR
封裝: CERAMIC, SOT-123A, 4 PIN
文件頁(yè)數(shù): 2/15頁(yè)
文件大?。?/td> 109K
代理商: BLW85
March 1993
2
Philips Semiconductors
Product specification
HF/VHF power transistor
BLW85
DESCRIPTION
N-P-N silicon planar epitaxial
transistor intended for use in class-A,
B and C operated mobile h.f. and
v.h.f. transmitters with a nominal
supply voltage of 12,5 V. The
transistor is resistance stabilized and
is guaranteed to withstand severe
load mismatch conditions with a
supply over-voltage to 16,5 V.
Matched h
FE
groups are available on
request.
It has a 3/8" flange envelope with a
ceramic cap. All leads are isolated
from the flange.
QUICK REFERENCE DATA
R.F. performance up to T
h
= 25
°
C
MODE OF OPERATION
V
CE
V
f
MHz
P
L
W
G
p
dB
η
%
z
i
Z
L
d
3
dB
c.w. (class-B)
s.s.b. (class-AB)
12,5
12,5
175
1,6
28
45
>
typ. 19,5
4,5
>
typ. 35
75
1,4
+
j1,5
2,7
j1,3
3
30 (P.E.P.)
typ.
33
PIN CONFIGURATION
handbook, halfpage
e
c
b
MBB012
Fig.1 Simplified outline and symbol.
halfpage
1
2
3
4
MSB057
PINNING - SOT123
PIN
DESCRIPTION
1
2
3
4
collector
emitter
base
emitter
PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely
safe provided that the BeO disc is not damaged.
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