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參數(shù)資料
| 型號： | BLW76 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | HF/VHF power transistor |
| 中文描述： | VHF BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | CERAMIC, SOT-121B, 4 PIN |
| 文件頁數(shù)： | 3/15頁 |
| 文件大?。?/td> | 90K |
| 代理商： | BLW76 |
August 1986
3
Philips Semiconductors
Product specification
HF/VHF power transistor
BLW76
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
Collector-emitter voltage (V
BE
= 0)
peak value
Collector-emitter voltage (open base)
Emitter-base voltage (open collector)
Collector current (average)
Collector current (peak value); f
>
1 MHz
R.F. power dissipation (f
>
1 MHz); T
mb
= 25
°
C
Storage temperature
Operating junction temperature
V
CESM
V
CEO
V
EBO
I
C(AV)
I
CM
P
rf
T
stg
T
j
max.
max.
max.
max.
max.
max.
65 to
+
150
°
C
max.
70 V
35 V
4 V
8 A
20 A
140 W
200
°
C
Fig.2 D.C. SOAR.
handbook, halfpage
MGP499
1
1
10
10
2
Tmb = 25
°
C
Th = 70
°
C
IC
(A)
VCE (V)
I Continuous d.c. operation
II Continuous r.f. operation
III Short-time operation during mismatch
Fig.3
R.F. power dissipation; V
CE
≤
28 V; f
>
1 MHz.
handbook, halfpage
Prf
(W)
0
50
100
0
150
MGP500
100
50
Th (
°
C)
ΙΙΙ
ΙΙ
Ι
derate by 0.77 W/K
derate by 0.56 W/K
THERMAL RESISTANCE
(dissipation = 60 W; T
mb
= 82
°
C, i.e. T
h
= 70
°
C)
From junction to mounting base (d.c. dissipation)
From junction to mounting base (r.f. dissipation)
From mounting base to heatsink
R
th j-mb(dc)
R
th j-mb(rf)
R
th mb-h
=
=
=
1,92 K/W
1,33 K/W
0,2 K/W
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