參數(shù)資料
型號: BLW76
廠商: NXP SEMICONDUCTORS
元件分類: 功率晶體管
英文描述: HF/VHF power transistor
中文描述: VHF BAND, Si, NPN, RF POWER TRANSISTOR
封裝: CERAMIC, SOT-121B, 4 PIN
文件頁數(shù): 10/15頁
文件大?。?/td> 90K
代理商: BLW76
August 1986
10
Philips Semiconductors
Product specification
HF/VHF power transistor
BLW76
R.F. performance in c.w. operation (unneutralized common-emitter class-B circuit); T
h
= 25
°
C
List of components:
Component layout and printed-circuit board for 108 MHz test circuit are shown in Fig.17.
f (MHz)
V
CE
(V)
28
P
L
(W)
80
P
S
(W)
typ. 13
G
p
(dB)
typ. 7,9
I
C
(A)
typ. 4,1
η
(%)
typ. 70
z
i
(
)
Y
L
(mS)
174
j40
108
0,85
+
j1,0
C1
C2
C3
C4ab
C5
C6
C7a
C7b
C 8
C11
L1
L2
L3
L4
L6
L8
L2 and L5 are strips on a double Cu-clad printed-circuit board with epoxy fibre-glass dielectric.
R1
=
R2 = 10
(
±
10%) carbon resistor
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
C9 = C10 = 4 to 40 pF film dielectric trimmer (cat. no. 2222 809 07008)
5 to 60 pF film dielectric trimmer (cat. no. 2222 809 07011)
22 pF ceramic capacitor (500 V)
2
×
82 pF ceramic capacitors in parallel (500 V)
270 pF polystyrene capacitor
100 nF polyester capacitor
8,2 pF ceramic capacitor (500 V)
10 pF ceramic capacitor (500 V)
5,6 pF ceramic capacitor (500 V)
10 pF ceramic capacitor (500 V)
21 nH; 2 turns Cu wire (1,0 mm); int. dia. 4,0 mm; length 3,5 mm; leads 2
×
5 mm
L5 = 2,4 nH; strip (12 mm
×
6 mm); tap for L4 at 6 mm from transistor
L7 = Ferroxcube wide-band h.f. choke, grade 3B (cat. no. 4312 020 36640)
100 nH; 7 turns closely wound enamelled Cu wire (0,5 mm); int. dia. 3 mm; leads 2
×
5 mm
49 nH; 2 turns Cu wire (1,6 mm); int. dia. 9,0 mm; length 4,7 mm; leads 2
×
5 mm
56 nH; 2 turns Cu wire (1,6 mm); int. dia. 10,0 mm; length 4,5 mm; leads 2
×
5 mm
Fig.16 Test circuit; c.w. class-B.
handbook, full pagewidth
C9
50
50
MGP513
C1
C2
C3
C4ab
C5
C6
R2
R1
C8
C7ab
C10
C11
L1
L2
L4
L3
L5
L8
T.U.T.
L6
L7
+
VCC
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