參數(shù)資料
型號(hào): BLW32
廠商: NXP SEMICONDUCTORS
元件分類(lèi): 功率晶體管
英文描述: UHF linear power transistor(UHF線性功率晶體管)
中文描述: UHF BAND, Si, NPN, RF POWER TRANSISTOR
封裝: CERAMIC, SOT-122A, 4 PIN
文件頁(yè)數(shù): 5/12頁(yè)
文件大?。?/td> 81K
代理商: BLW32
August 1986
5
Philips Semiconductors
Product specification
UHF linear power transistor
BLW32
CHARACTERISTICS
T
j
= 25
°
C unless otherwise specified
Notes
1.
2.
Measured under pulse conditions: t
p
300
μ
s;
δ ≤
0,02.
Measured under pulse conditions: t
p
50
μ
s;
δ ≤
0,01.
Collector-emitter breakdown voltage
V
BE
= 0; I
C
= 2 mA
open base; I
C
= 15 mA
Emitter-base breakdown voltage
open collector; I
E
= 1 mA
Collector cut-off current
V
BE
= 0; V
CE
= 30 V
V
BE
= 0; V
CE
= 30 V; T
j
= 175
°
C
D.C. current gain
(1)
I
C
= 150 mA; V
CE
= 25 V
V
(BR)CES
V
(BR)CEO
>
>
50 V
30 V
V
(BR)EBO
>
4 V
I
CES
I
CES
<
<
0,5 mA
1,2 mA
>
typ.
20
40
h
FE
I
C
= 150 mA; V
CE
= 25 V; T
j
= 175
°
C
Collector-emitter saturation voltage
(1)
I
C
= 300 mA; I
B
= 30 mA
Transition frequency at f = 500 MHz
(2)
I
E
= 150 mA; V
CB
= 25 V
I
E
= 300 mA; V
CB
= 25 V
Collector capacitance at f = 1 MHz
I
E
= I
e
= 0; V
CB
= 25 V
Feedback capacitance at f = 1 MHz
I
C
= 10 mA; V
CE
= 25 V
Collector-stud capacitance
h
FE
<
120
V
CEsat
typ.
500 mV
f
T
f
T
typ.
typ.
3,5 GHz
3,4 GHz
C
c
typ.
3,7 pF
C
re
C
cs
typ.
typ.
1,9 pF
1,2 pF
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