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參數(shù)資料
| 型號： | BLW32 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF linear power transistor(UHF線性功率晶體管) |
| 中文描述： | UHF BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | CERAMIC, SOT-122A, 4 PIN |
| 文件頁數(shù)： | 3/12頁 |
| 文件大小： | 81K |
| 代理商： | BLW32 |
August 1986
3
Philips Semiconductors
Product specification
UHF linear power transistor
BLW32
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
Collector-emitter voltage
(peak value); V
BE
= 0
open base
Emitter-base voltage (open collector)
Collector current
d.c. or average
(peak value); f
>
1 MHz
Total power dissipation up to T
mb
= 25
°
C
Storage temperature
Operating junction temperature
V
CESM
V
CEO
V
EBO
max.
max.
max.
50 V
30 V
4 V
I
C
I
CM
P
tot
T
stg
T
j
max.
max.
max.
65 to
+
150
°
C
max.
650 mA
1000 mA
10,8 W
200
°
C
Fig.2 D.C. SOAR.
(1) Second breakdown limit (independent of temperature).
handbook, halfpage
MGP429
10
1
1
10
10
2
VCE (V)
IC
(A)
Tmb = 25
°
C
Th = 70
°
C
(1)
Fig.3 Power derating curve vs. temperature.
handbook, halfpage
0
10
5
0
100
MGP430
50
Th (
°
C)
Ptot
(W)
THERMAL RESISTANCE
(see Fig.4)
From junction to mounting base
(dissipation = 3,75 W; T
mb
= 72,3
°
C; i.e. T
h
= 70
°
C)
From mounting base to heatsink
R
th j-mb
R
th mb-h
=
=
15,0 K/W
0,6 K/W
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