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參數(shù)資料
| 型號： | BLW29 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | VHF power transistor |
| 中文描述： | VHF BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | CERAMIC, SOT-120A, 4 PIN |
| 文件頁數(shù)： | 8/11頁 |
| 文件大小： | 69K |
| 代理商： | BLW29 |
August 1986
8
Philips Semiconductors
Product specification
VHF power transistor
BLW29
Fig.9 Typical values; f = 175 MHz.
.
V
CE
= 13,5 V;
V
CE
= 12, 5 V
handbook, halfpage
0
2
4
0
20
MGP421
10
PS (W)
PL
(W)
Th = 25
°
C
70
°
C
Fig.10 Typical values; f = 175 MHz.
V
CE
= 13,5 V;
V
CE
= 12, 5 V
handbook, halfpage
Gp
(dB)
0
10
20
30
0
20
MGP422
15
10
5
Th = 25
°
C
Th = 70
°
C
25
°
C
70
°
C
Gp
η
125
η
(%)
0
100
75
50
25
PL (W)
Fig.11 R.F. SOAR (short-time operation during
mismatch); f = 175 MHz;
T
h
= 70
°
C; R
= 0,45 K/W; V
= 13,5 V or 12,5 V;
P
S
= P
Snom
at V
CEnom
and VSWR = 1
handbook, halfpage
PLnom
(W)
(VSWR = 1)
1
1.1
1.3
10
20
MGP423
1.2
15
VSWR =
5
10
20
50
PS
PSnom
VCE
VCEnom
The transistor has been developed for use with
unstabilized supply voltages. As the output power and
drive power increase with the supply voltage, the nominal
output power must be derated in accordance with the
graph for safe operation at supply voltages other than the
nominal. The graph shows the permissible output power
under nominal conditions (VSWR = 1), as a function of the
expected supply over-voltage ratio with VSWR as
parameter.
The graph applies to the situation in which the drive
(P
S
/P
Snom
) increases linearly with supply over-voltage
ratio.
OPERATING NOTE
Below 70 MHz a base-emitter resistor of 10
is
recommended to avoid oscillation. This resistor must be
effective for r.f. only.
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| BLW30 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:VHF power transistor |
| BLW31 | 制造商:ASI 制造商全稱:ASI 功能描述:NPN SILICON RF POWER TRANSISTOR |
| BLW31_07 | 制造商:ASI 制造商全稱:ASI 功能描述:NPN SILICON RF POWER TRANSISTOR |
| BLW32 | 功能描述:射頻雙極電源晶體管 RF Transistor RoHS:否 制造商:M/A-COM Technology Solutions 配置:Single 直流集電極/Base Gain hfe Min:40 最大工作頻率:30 MHz 集電極—發(fā)射極最大電壓 VCEO:25 V 發(fā)射極 - 基極電壓 VEBO:4 V 集電極連續(xù)電流:20 A 最大直流電集電極電流: 功率耗散:250 W 封裝 / 箱體:Case 211-11 封裝:Tray |
| BLW33 | 制造商:ASI 制造商全稱:ASI 功能描述:NPN SILICON RF POWER TRANSISTOR |
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