- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄369473 > BLW29 (NXP SEMICONDUCTORS) VHF power transistor PDF資料下載
參數(shù)資料
| 型號(hào)： | BLW29 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | VHF power transistor |
| 中文描述： | VHF BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | CERAMIC, SOT-120A, 4 PIN |
| 文件頁數(shù)： | 6/11頁 |
| 文件大?。?/td> | 69K |
| 代理商： | BLW29 |
August 1986
6
Philips Semiconductors
Product specification
VHF power transistor
BLW29
APPLICATION INFORMATION
R.F. performance in c.w. operation (unneutralized common-emitter class-B circuit); T
h
= 25
°
C
List of components:
Component layout and printed-circuit board for 175 MHz test circuit are shown in Fig.8.
f (MHz)
V
CE
(V)
13,5
12,5
P
L
(W)
15
15
P
S
(W)
<
1,5
typ. 1,34
G
p
(dB)
>
10
typ. 10,5
I
C
(A)
<
1,85
typ. 1,8
η
(%)
>
60
typ. 67
z
i
(
)
1,3
+
j0,68
Y
L
(mS)
180
j54
175
175
C1
C2
C3a =
C4
C5
L1
L2
L3
L5
L7
L3 and L4 are strips on a double Cu-clad printed-circuit board with epoxy fibre-glass dielectric, thickness 1/16".
R1
=
R2 = 10
carbon resistor
=
=
2,5 to 20 pF film dielectric trimmer (cat. no. 2222 809 07004)
C6 = C7 = 4 to 40 pF film dielectric trimmer (cat. no. 2222 809 07008)
C3b = 47 pF ceramic capacitor (500 V)
1 nF ceramic capacitor
100 nF polyester capacitor
1
2
turn Cu wire (1,6 mm); int. dia. 6,0 mm; leads 2
×
5 mm
L6 = Ferroxcube wide-band h.f. choke, grade 3B (cat. no. 4312 020 36640)
L4 = strip (12 mm
×
6 mm); taps for C3a and C3b at 5 mm from transistor
4
1
2
turns closely wound enamelled Cu wire (1,6 mm); int. dia. 6,0 mm; leads 2
×
5 mm
2 turns closely wound enamelled Cu wire (1,6 mm); int. dia. 6,0 mm; leads 2
×
5 mm
=
=
=
=
=
=
=
Fig.7 Test circuit; c.w. class-B.
handbook, full pagewidth
L2
MGP419
50
50
C2
C3b
C1
C7
C4
R2
C5
C6
L3
L4
+
VCC
L7
L5
L6
L1
C3a
T.U.T.
R1
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BLW30 | VHF power transistor |
| BLW32 | UHF linear power transistor(UHF線性功率晶體管) |
| BLW33 | UHF Linear power transistor(UHF 線性功率晶體管) |
| BLW34 | UHF Linear power transistor(UHF 線性功率晶體管) |
| BLW50F | HF/VHF power transistor(HF/VHF功率 晶體管) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BLW30 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:VHF power transistor |
| BLW31 | 制造商:ASI 制造商全稱:ASI 功能描述:NPN SILICON RF POWER TRANSISTOR |
| BLW31_07 | 制造商:ASI 制造商全稱:ASI 功能描述:NPN SILICON RF POWER TRANSISTOR |
| BLW32 | 功能描述:射頻雙極電源晶體管 RF Transistor RoHS:否 制造商:M/A-COM Technology Solutions 配置:Single 直流集電極/Base Gain hfe Min:40 最大工作頻率:30 MHz 集電極—發(fā)射極最大電壓 VCEO:25 V 發(fā)射極 - 基極電壓 VEBO:4 V 集電極連續(xù)電流:20 A 最大直流電集電極電流: 功率耗散:250 W 封裝 / 箱體:Case 211-11 封裝:Tray |
| BLW33 | 制造商:ASI 制造商全稱:ASI 功能描述:NPN SILICON RF POWER TRANSISTOR |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。