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參數(shù)資料
| 型號(hào)： | BLV97 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | RM Series - Econoline Unregulated DC-DC Converters; Input Voltage (Vdc): 3.3V; Output Voltage (Vdc): 3.3V; Power: 0.25W; Single Output Rail; Industry Standard Pinout; 1kVDC & 2kVDC Isolation; High Efficiency for Low Power Applications; UL94V-0 Package Material; Optional Continuous Short Circuit Protected; Fully Encapsulated; Efficiency to 80%; Custom versions available |
| 中文描述： | UHF BAND, Si, NPN, RF POWER TRANSISTOR |
| 文件頁數(shù)： | 4/11頁 |
| 文件大?。?/td> | 65K |
| 代理商： | BLV97 |
March 1993
4
Philips Semiconductors
Product specification
UHF power transistor
BLV97CE
CHARACTERISTICS
at T
j
= 25
°
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
(BR)CBO
collector-base breakdown voltage
open emitter
I
C
= 50 mA
open base
I
C
= 100 mA
open collector
I
E
= 10 mA
V
BE
= 0
V
CE
= 27 V
I
C
= 2 A
V
CE
= 20 V
I
E
= I
e
= 0
V
CB
= 25 V
I
C
= 0
V
CE
= 25 V
50
V
V
(BR)CEO
collector-emitter breakdown voltage
27
V
V
(BR)EBO
emitter-base breakdown voltage
3.5
V
I
CES
collector leakage current
10
mA
h
FE
DC current gain
15
C
c
collector capacitance at f = 1 MHz
44
pF
C
re
feedback capacitance at f = 1 MHz
30
pF
C
cf
collector-flange capacitance
2
pF
Fig.4
DC current gain as a function of collector
current; typical values.
handbook, halfpage
hFE
0
2
4
IC (A)
8
0
80
6
60
40
20
MDA443
VCE = 25 V
20 V
Fig.5
Output capacitance as a function of
collector-base voltage; typical values.
handbook, halfpage
(pF)
0
10
VCB (V)
20
30
0
80
60
40
20
MDA444
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BLV97CE | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:UHF power transistor |
| BLV98CE | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:UHF power transistor |
| BLV99 | 制造商:ASI 制造商全稱:ASI 功能描述:NPN SILICON RF POWER TRANSISTOR |
| BLV99/SL | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:RF Power Transistors for UHF |
| BLV99SL | 功能描述:射頻雙極電源晶體管 RF Bipolar Trans RoHS:否 制造商:M/A-COM Technology Solutions 配置:Single 直流集電極/Base Gain hfe Min:40 最大工作頻率:30 MHz 集電極—發(fā)射極最大電壓 VCEO:25 V 發(fā)射極 - 基極電壓 VEBO:4 V 集電極連續(xù)電流:20 A 最大直流電集電極電流: 功率耗散:250 W 封裝 / 箱體:Case 211-11 封裝:Tray |
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