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參數(shù)資料
| 型號(hào)： | BLV97 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類(lèi)： | 功率晶體管 |
| 英文描述： | RM Series - Econoline Unregulated DC-DC Converters; Input Voltage (Vdc): 3.3V; Output Voltage (Vdc): 3.3V; Power: 0.25W; Single Output Rail; Industry Standard Pinout; 1kVDC & 2kVDC Isolation; High Efficiency for Low Power Applications; UL94V-0 Package Material; Optional Continuous Short Circuit Protected; Fully Encapsulated; Efficiency to 80%; Custom versions available |
| 中文描述： | UHF BAND, Si, NPN, RF POWER TRANSISTOR |
| 文件頁(yè)數(shù)： | 2/11頁(yè) |
| 文件大?。?/td> | 65K |
| 代理商： | BLV97 |
March 1993
2
Philips Semiconductors
Product specification
UHF power transistor
BLV97CE
FEATURES
Internal input matching to achieve high power gain
Ballasting resistors for an optimum temperature profile
Gold metallization ensures excellent reliability
DESCRIPTION
NPN silicon planar epitaxial transistor in a SOT171
envelope, intended for common emitter, class-AB
operation in radio transmitters for the 960 MHz
communications band. The transistor has a 6-lead flange
envelope, with a ceramic cap. All leads are isolated from
the flange.
QUICK REFERENCE DATA
RF performance up to T
h
= 25
°
C in a common emitter class-AB circuit.
MODE OF OPERATION
f (MHz)
V
CE
(V)
24
P
L
(W)
35
G
P
(dB)
>
7
η
c
(%)
c.w. class-AB
960
>
50
PINNING - SOT171A
PIN
SYMBOL
DESCRIPTION
1
2
3
4
5
6
e
e
b
c
e
e
emitter
emitter
base
collector
emitter
emitter
Fig.1 Simplified outline and symbol.
handbook, halfpage
MAM141
Top view
e
c
b
1
2
3
4
5
6
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
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| BLW29 | VHF power transistor |
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| BLW33 | UHF Linear power transistor(UHF 線性功率晶體管) |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BLV97CE | 制造商:PHILIPS 制造商全稱(chēng):NXP Semiconductors 功能描述:UHF power transistor |
| BLV98CE | 制造商:PHILIPS 制造商全稱(chēng):NXP Semiconductors 功能描述:UHF power transistor |
| BLV99 | 制造商:ASI 制造商全稱(chēng):ASI 功能描述:NPN SILICON RF POWER TRANSISTOR |
| BLV99/SL | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:RF Power Transistors for UHF |
| BLV99SL | 功能描述:射頻雙極電源晶體管 RF Bipolar Trans RoHS:否 制造商:M/A-COM Technology Solutions 配置:Single 直流集電極/Base Gain hfe Min:40 最大工作頻率:30 MHz 集電極—發(fā)射極最大電壓 VCEO:25 V 發(fā)射極 - 基極電壓 VEBO:4 V 集電極連續(xù)電流:20 A 最大直流電集電極電流: 功率耗散:250 W 封裝 / 箱體:Case 211-11 封裝:Tray |
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