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參數(shù)資料
| 型號： | BLV958FL |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF power transistors |
| 中文描述： | UHF BAND, Si, NPN, RF POWER TRANSISTOR, SOT-391B |
| 封裝： | SOT-391B, 3 PIN |
| 文件頁數(shù)： | 4/12頁 |
| 文件大小： | 86K |
| 代理商： | BLV958FL |
2000 Jan 12
4
Philips Semiconductors
Product specification
UHF power transistors
BLV958; BLV958FL
CHARACTERISTICS
T
j
= 25
°
C unless otherwise specified.
Notes
1.
2.
Measured under pulsed conditions: t
p
≤
500
μ
s;
δ ≤
0.01.
Value of C
c
is that of the die only, it is not measurable because of internal matching network.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
5
120
UNIT
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CES
h
FE
collector-base breakdown voltage
collector-emitter breakdown voltage
emitter-base breakdown voltage
collector leakage current
DC current gain
open emitter; I
C
= 60 mA
open base; I
C
= 150 mA
open collector; I
E
= 3 mA
V
BE
= 0; V
CE
= 28 V
V
CE
= 10 V; I
C
= 4.5 A; note 1;
see Fig 3
V
CB
= 26 V; I
E
= i
e
= 0;
f = 1 MHz; note 2; see Fig 4
70
30
3
30
V
V
V
mA
C
c
collector capacitance
75
pF
Fig.3
DC current gain as a function of collector
current; typical values.
Measured under pulsed conditions; t
p
≤
500
μ
s;
δ ≤
0.01.
(1) V
CE
= 26 V.
(2) V
CE
= 10 V.
handbook, halfpage
0
80
40
0
4
8
12
16
hFE
IC(A)
MLD243
(2)
(1)
Fig.4
Collector capacitance as a function of
collector-base voltage; typical values.
Value C
is that of the die only, it is not measurable because of
internal matching network.
I
E
= i
e
= 0; f = 1 MHz.
handbook, halfpage
Cc
0
100
150
(pF)
50
0
10
20
30
40
CB
MLD244
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