
2000 Jan 12
2
Philips Semiconductors
Product specification
UHF power transistors
BLV958; BLV958FL
FEATURES
Internal input and output matching for easy matching,
high gain and efficiency
Poly-silicon emitter ballasting resistors for an optimum
temperature profile
Gold metallization ensures excellent reliability.
APPLICATIONS
Base stations in the 800 to 960 MHz frequency range.
DESCRIPTION
NPN silicon planar epitaxial transistors primarily intended
for common emitter class-AB operation. The transistors
have internal input and output matching by means of MOS
capacitors. The encapsulations are a 2-lead rectangular
SOT391A flange package and a SOT391B flangeless
package, both with a ceramic cap.
PINNING - SOT391A
PINNING - SOT391B
PIN
SYMBOL
DESCRIPTION
1
2
3
c
b
e
collector
base
emitter; connected to flange
Fig.1 Simplified outline (SOT391A) and symbol.
handbook, halfpage
MAM203
1
2
3
Top view
e
c
b
PIN
SYMBOL
DESCRIPTION
1
2
c
b
e
collector
base
emitter
Ground plane
Fig.2 Simplified outline (SOT391B) and symbol.
handbook, halfpage
MSA465
1
2
Top view
e
c
b
QUICK REFERENCE DATA
RF performance at T
h
= 25
°
C in a common emitter test circuit.
MODE OF
OPERATION
f
(MHz)
V
CE
(V)
P
L
(W)
G
p
(dB)
≥
8
≥
8.5
η
C
(%)
≥
50
≥
50
CW, class-AB
900
960
26
26
75
75
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.