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參數(shù)資料
| 型號： | BLV950 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF push-pull power transistor |
| 中文描述： | 2 CHANNEL, UHF BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | CERAMIC, SOT-262A2, 5 PIN |
| 文件頁數(shù)： | 5/16頁 |
| 文件大小： | 109K |
| 代理商： | BLV950 |
1997 Oct 27
5
Philips Semiconductors
Product specification
UHF push-pull power transistor
BLV950
APPLICATION INFORMATION
RF performance at T
h
= 25
°
C in a common emitter push-pull test circuit; R
th mb-h
= 0.15 K/W.
Notes
1.
2.
f
1
= 900.0 MHz; f
2
= 900.1 MHz.
f
1
= 960.0 MHz; f
2
= 960.1 MHz.
Ruggedness in class-AB operation
The BLV950 is capable of withstanding a load mismatch corresponding to VSWR = 2 : 1 through all phases under the
conditions: P
L
= 150 W; f = 960 MHz; V
CE
= 26 V; I
CQ
= 2
×
100 mA; T
h
= 25
°
C; R
th mb-h
= 0.15 K/W and also a load
mismatch of VSWR = 5 : 1 through all phases at P
L
= 150 W (PEP) and f
1
= 960.0 MHz and f
2
= 960.1 MHz.
MODE OF OPERATION
f
(MHz)
V
CE
(V)
I
CQ
(mA)
2
×
100
P
L
(W)
G
p
(dB)
≥
8
typ. 9
≥
7.5
typ. 8.5
≥
8.5
typ. 9.5
≥
8
typ. 9
η
C
(%)
≥
45
typ. 50
≥
45
typ. 50
≥
35
typ. 40
≥
35
typ. 40
d
3
(dBc)
CW, class-AB
900
26
150
960
26
2
×
100
150
2-tone, class-AB
note 1
26
2
×
100
150 (PEP)
≤
28
typ.
31
≤
30
typ.
33
note 2
26
2
×
100
150 (PEP)
Fig.4
Power gain and efficiency as functions of
load power; typical values.
V
CE
= 26 V; I
CQ
= 2
×
100 mA; f = 960 MHz.
handbook, halfpage
0
50
100
150
200
0
MLD258
8
PL
60
40
20
0
4
η
C
(%)
η
C
Gp
(dB)
Gp
V
CE
= 26 V; I
CQ
= 2
×
100 mA; f = 960 MHz.
Fig.5
Load power as a function of input power;
typical values.
handbook, halfpage
PL
(W)
0
10
20
30
50
0
100
150
MLD259
Pi
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