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參數(shù)資料
| 型號： | BLV950 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF push-pull power transistor |
| 中文描述： | 2 CHANNEL, UHF BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | CERAMIC, SOT-262A2, 5 PIN |
| 文件頁數(shù)： | 11/16頁 |
| 文件大?。?/td> | 109K |
| 代理商： | BLV950 |
1997 Oct 27
11
Philips Semiconductors
Product specification
UHF push-pull power transistor
BLV950
Fig.11 Input impedance as a function of frequency
(series components); typical values per
section.
V
CE
= 26 V; I
CQ
= 2
×
100 mA; P
L
= 150 W (total device);
T
h
= 25
°
C; R
th mb-h
= 0.15 K/W.
handbook, halfpage
(
)
840
880
920
2
6
MLD265 - 1
960
1000
4
2
0
f (MHz)
xi
ri
Fig.12 Load impedance as a function of frequency
(series components); typical values per
section.
V
CE
= 26 V; I
CQ
= 2
×
100 mA; P
L
= 150 W (total device);
T
h
= 25
°
C; R
th mb-h
= 0.15 K/W.
handbook, halfpage
ZL
(
)
MLD266 - 1
f (MHz)
RL
XL
840
880
920
960
1000
2
0
2
4
Fig.13 Power gain as a function of frequency;
typical values.
V
CE
= 26 V; I
CQ
= 2
×
100 mA; P
L
= 150 W (total device);
T
h
= 25
°
C; R
th mb-h
= 0.15 K/W.
handbook, halfpage
840
880
920
960
0
MLD267
1000
8
4
G
f (MHz)
p
(dB)
Fig.14 Definition of transistor impedance.
handbook, halfpage
MBA451
Zi
ZL
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