參數(shù)資料
型號(hào): BLV93
廠商: NXP SEMICONDUCTORS
元件分類(lèi): 功率晶體管
英文描述: UHF power transistor
中文描述: UHF BAND, Si, NPN, RF POWER TRANSISTOR
封裝: CERAMIC, SOT-171A, 6 PIN
文件頁(yè)數(shù): 9/11頁(yè)
文件大?。?/td> 63K
代理商: BLV93
March 1993
9
Philips Semiconductors
Product specification
UHF power transistor
BLV93
RUGGEDNESS
The device is capable of withstanding a full load mismatch
(VSWR = 50; all phases) at rated load power up to a supply
voltage of 15,5 V and at T
h
= 25
°
C.
Fig.13 Input impedance (series components).
V
CE
= 12,5 V; P
= 8 W; f = 800-960 MHz;
T
h
= 25
°
C; class-B operation; typical values.
handbook, halfpage
Zi
(
)
800
1000
0
1
2
3
4
840
880
xi
ri
920
f (MHz)
960
MDA431
Fig.14 Load impedance (series components).
V
CE
= 12,5 V; P
= 8 W; f = 800-960 MHz;
T
h
= 25
°
C; class-B operation; typical values.
handbook, halfpage
ZL
(
)
800
1000
2
0
2
4
6
840
RL
XL
880
920
f (MHz)
960
MDA432
Fig.15 Power gain vs. frequency.
V
CE
= 12,5 V; P
= 8 W; f = 800-960 MHz;
T
h
= 25
°
C; class-B operation; typical values.
handbook, halfpage
(dB)
800
850
900
f (MHz)1000
0
8
950
6
4
2
MDA433
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