參數(shù)資料
型號: BLV93
廠商: NXP SEMICONDUCTORS
元件分類: 功率晶體管
英文描述: UHF power transistor
中文描述: UHF BAND, Si, NPN, RF POWER TRANSISTOR
封裝: CERAMIC, SOT-171A, 6 PIN
文件頁數(shù): 4/11頁
文件大小: 63K
代理商: BLV93
March 1993
4
Philips Semiconductors
Product specification
UHF power transistor
BLV93
CHARACTERISTICS
T
j
= 25
°
C unless otherwise specified
Note
1.
Measured under pulse conditions: t
p
= 50
μ
s;
δ <
1%.
Collector-base breakdown voltage
open emitter; I
C
= 20 mA
Collector-emitter breakdown voltage
open base; I
C
= 40 mA
Emitter-base breakdown voltage
open collector; I
E
= 2 mA
Collector cut-off current
V
BE
= 0; V
CE
= 16 V
Second breakdown energy
L = 25 mH; f = 50 Hz; R
BE
= 10
D.C. current gain
I
C
= 1,2 A; V
CE
= 10 V
Transition frequency at f = 500 MHz
(1)
I
E
= 1,2 A; V
CE
= 12,5 V
Collector capacitance at f = 1 MHz
I
E
= i
e
= 0; V
CB
= 12,5 V
Feed-back capacitance at f = 1 MHz
I
C
= 0; V
CE
= 12,5 V
Collector-flange capacitance
V
(BR)CBO
>
36 V
V
(BR)CEO
>
16 V
V
(BR)EBO
>
3 V
I
CES
<
10 mA
E
SBR
>
2 mJ
h
FE
>
25
f
T
typ.
4 GHz
C
c
typ.
15 pF
C
re
C
cf
typ.
typ.
9 pF
2 pF
Fig.4 T
j
= 25
°
C; typical values.
handbook, halfpage
hFE
0
1
2
IC (A)
4
0
80
3
60
40
20
MDA424
12.5 V
VCE = 10 V
Fig.5
V
CB
= 12,5 V; f = 500 MHz; T
j
= 25
°
C;
typical values.
handbook, halfpage
(GHz)
0
4
0
1
2
3
4
0.8
1.6
2.4
3.2
MDA425
IE (A)
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