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參數(shù)資料
| 型號： | BLV92 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF power transistor |
| 中文描述： | UHF BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | CERAMIC, SOT-171A, 6 PIN |
| 文件頁數(shù)： | 4/11頁 |
| 文件大?。?/td> | 63K |
| 代理商： | BLV92 |
March 1993
4
Philips Semiconductors
Product specification
UHF power transistor
BLV92
CHARACTERISTICS
T
j
= 25
°
C unless otherwise specified
Note
1.
Measured under pulse conditions: t
p
= 50
μ
s;
δ <
1%.
Collector-base breakdown voltage, open emitter; I
C
= 10 mA
Collector-emitter breakdown voltage, open base; I
C
= 20 mA
Emitter-base breakdown voltage, open collector; I
E
= 1 mA
Collector cut-off current, V
BE
=
0; V
CE
=
16 V
Second breakdown energy, L = 25 mH; f = 50 Hz; R
BE
= 10
D.C. current gain, I
C
= 0,6 A; V
CE
= 10 V
Transition frequency at f = 500 MHz
(1)
,
I
E
= 0,6 A; V
CE
= 12,5 V
Collector capacitance at f = 1 MHz, I
E
= i
e
= 0; V
CB
= 12,5 V
Feed-back capacitance at f = 1 MHz, I
C
= 0; V
CE
= 12,5 V
Collector-flange capacitance
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CES
E
SBR
h
FE
f
T
C
c
C
re
C
cf
>
>
>
<
>
>
typ.
typ.
typ.
typ.
36 V
16 V
3 V
5 mA
1 mJ
25
4 GHz
8 pF
5 pF
2 pF
Fig.4 T
j
= 25
°
C; typical values.
handbook, halfpage
hFE
0
2
0
20
40
60
80
0.4
0.8
1.2
1.6
MDA410
IC (A)
12.5 V
VCE = 10 V
Fig.5
V
CB
= 12,5 V; f = 500 MHz; T
j
= 25
°
C;
typical values.
handbook, halfpage
(GHz)
0
2
0
1
2
3
4
0.4
0.8
1.2
1.6
MDA411
IE (A)
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