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參數(shù)資料
| 型號： | BLV861 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF linear push-pull power transistor |
| 中文描述： | 2 CHANNEL, UHF BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | CERAMIC, SOT-289A, 5 PIN |
| 文件頁數(shù)： | 4/12頁 |
| 文件大?。?/td> | 129K |
| 代理商： | BLV861 |
1998 Jan 16
4
Philips Semiconductors
Product specification
UHF linear push-pull power transistor
BLV861
CHARACTERISTICS
Values apply to either transistor section; T
j
= 25
°
C unless otherwise specified.
Note
1.
The value of C
c
is that of the die only; it is not measurable because of the internal matching network.
APPLICATION INFORMATION
RF performance at T
h
= 25
°
C in a common emitter push-pull class-AB test circuit.
Ruggedness in class-AB operation
The BLV861 is capable of withstanding a load mismatch corresponding to VSWR = 3 : 1 through all phases under the
conditions: T
h
= 25
°
C; f = 860 MHz; V
CE
= 28 V; I
CQ
= 0.1 A; P
L
= 100 W; R
th mb-h
= 0.2 K/W.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
3
120
1.5
UNIT
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
h
FE
h
FE
C
c
collector-base breakdown voltage
collector-emitter breakdown voltage
emitter-base breakdown voltage
collector-base leakage current
DC current gain
DC current gain ratio of both sections
collector capacitance
I
E
= 0; I
C
= 35 mA
I
B
= 0; I
C
= 90 mA
I
E
= 2 mA; I
C
= 0
V
CB
= 28 V
I
C
= 2.8 A; V
CE
= 10 V
I
C
= 4.5 A; V
CE
= 10 V
I
E
= i
e
= 0; V
CE
= 28 V;
f = 1 MHz; note 1
65
30
3
30
0.67
47
V
V
V
mA
pF
MODE OF OPERATION
f
(MHz)
V
CE
(V)
I
CQ
(A)
P
L
(W)
G
p
(dB)
≥
8.5
η
C
(%)
≥
55
G
p
(dB)
≤
1
CW class-AB
860
28
0.1
100
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