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參數(shù)資料
| 型號： | BLV861 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF linear push-pull power transistor |
| 中文描述： | 2 CHANNEL, UHF BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | CERAMIC, SOT-289A, 5 PIN |
| 文件頁數(shù)： | 2/12頁 |
| 文件大小： | 129K |
| 代理商： | BLV861 |
1998 Jan 16
2
Philips Semiconductors
Product specification
UHF linear push-pull power transistor
BLV861
FEATURES
Double stage internal input and output matching
networks for an optimum wideband capability and
high gain
Polysilicon emitter ballasting resistors for an optimum
temperature profile
Gold metallization ensures excellent reliability.
APPLICATIONS
Common emitter class-AB output stages of television
transmitter amplifiers (sound and vision) operating in
bands 4 and 5 (470 to 860 MHz).
DESCRIPTION
NPN silicon planar epitaxial transistor with two sections in
push-pull configuration. The device is encapsulated in a
SOT289A 4-lead rectangular flange package, with a
ceramic cap.
PINNING
Notes
1.
2.
Collectors c1 and c2 are internally connected.
Common emitters are connected to the flange.
PIN
SYMBOL
DESCRIPTION
1
2
3
4
5
c1
c2
b1
b2
e
collector 1; note 1
collector 2; note 1
base 1
base 2
common emitters; note 2
Fig.1 Simplified outline (SOT289A) and symbol.
handbook, halfpage
MAM374
c1
b1
b2
c2
e
1
2
3
4
Top view
5
QUICK REFERENCE DATA
RF performance at T
h
= 25
°
C in a common emitter push-pull test circuit.
MODE OF
OPERATION
f
(MHz)
V
CE
(V)
P
L
(W)
G
p
(dB)
≥
8.5
η
C
(%)
≥
55
G
p
(dB)
≤
1
CW class-AB
860
28
100
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
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