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參數(shù)資料
| 型號(hào)： | BLV58 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF Linear push-pull power transistor(UHF 線性推挽式功率晶體管) |
| 中文描述： | 2 CHANNEL, UHF BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | CERAMIC, SOT-289A, 5 PIN |
| 文件頁數(shù)： | 6/13頁 |
| 文件大?。?/td> | 109K |
| 代理商： | BLV58 |
September 1991
6
Philips Semiconductors
Product specification
UHF linear push-pull power transistor
BLV58
APPLICATION INFORMATION
RF performance at T
h
= 25
°
C in a common emitter push-pull test circuit; R
th mb-h
= 0.2 K/W.
Notes
1.
Three-tone test method: vision carrier
8 dB (860 MHz), sound carrier
7 dB (865.5 MHz), sideband signal
16 dB
(861 MHz); zero dB corresponds to peak sync level.
Two-tone test method: vision carrier 0 dB (860 MHz), sound carrier
7 dB (865.5 MHz); zero dB corresponds to peak
sync level. Cross-modulation distortion (d
cm
) is the voltage variation (%) of the sound carrier when the vision carrier
is switched from 0 dB to
20 dB.
2.
MODE OF OPERATION
f
vision
(MHz)
V
CE
(V)
I
CQ
(A)
P
o sync
(W)
G
P
(dB)
d
im
(dB)
(note
1
)
<
45
typ.
47
d
cm
(%)
(note
2
)
<
20
c.w. class-A
860
25
2
×
1.6
25
>
10
typ. 11.5
Fig.6
Intermodulation distortion as a function of
output power.
Class-A operation; V
= 25 V; f = 860 MHz; 3-tone test
(
8 dB,
16 dB,
7 dB); I
CQ
= 2
×
1.6 A.
handbook, halfpage
-70
-60
-50
0
10
20
30
(dB)
MRA351
dim
(W)
Po sync
h
o
h
o
Fig.7
Intermodulation distortion as a function of
collector current.
Class-A operation; V
= 25 V; f = 860 MHz; 3-tone test
(
8 dB,
16 dB,
7 dB); P
o sync
= 25 W.
handbook, halfpage
MRA349
-50
-48
-46
-44
-42
1.6
2.4
3.2
4
(A)
(dB)
IC
= 25
C
o
Th
= 70 C
Th
Ruggedness in Class-A operation
The BLV58 is capable of withstanding a full load mismatch
corresponding to VSWR = 50:1 through all phases under
the following conditions:
V
CE
= 25 V, f = 860 MHz, T
h
= 25
°
C,
R
th mb-h
= 0.2 K/W, I
CQ
= 2
×
1.6 A,
and rated output power.
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