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參數(shù)資料
| 型號： | BLV58 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF Linear push-pull power transistor(UHF 線性推挽式功率晶體管) |
| 中文描述： | 2 CHANNEL, UHF BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | CERAMIC, SOT-289A, 5 PIN |
| 文件頁數(shù)： | 3/13頁 |
| 文件大小： | 109K |
| 代理商： | BLV58 |
September 1991
3
Philips Semiconductors
Product specification
UHF linear push-pull power transistor
BLV58
LIMITING VALUES (per transistor section unless otherwise specified)
In accordance with the Absolute Maximum System (IEC 134).
Note
1.
Total device, both sections equally loaded.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CBO
V
CEO
V
EBO
I
C
, I
C(AV)
I
CM
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
collector current
open emitter
open base
open collector
DC or average value
peak value;
f
>
1 MHz
DC operation;
T
mb
= 70
°
C
(note 1)
50
27
3.5
4
8
V
V
V
A
A
P
tot
total power dissipation
87
W
T
stg
T
j
storage temperature range
junction operating temperature
65
150
200
°
C
°
C
Fig.2 DC SOAR.
Total device, both sections equally loaded.
handbook, halfpage
MRA354
1
1
10
(A)
50
o
CE
IC
= 25
C
h
T
mb
o
Fig.3 Power derating curve.
(I) Continuous DC operation.
(II) Short time operation during mismatch.
Total device, both sections equally loaded.
handbook, halfpage
MRA355
0
40
80
120
160
0
20
40
60
80
100
120
( C)
Th
(W)
I
II
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