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參數(shù)資料
| 型號(hào)： | BLV33 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | VHF linear power transistor(VHF線性功率晶體管) |
| 中文描述： | VHF BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | CERAMIC, SOT-147, 4 PIN |
| 文件頁(yè)數(shù)： | 13/20頁(yè) |
| 文件大?。?/td> | 130K |
| 代理商： | BLV33 |
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1996 Oct 10
13
Philips Semiconductors
Product specification
VHF linear power transistor
BLV33
List of components used in test circuit
(see Fig.16)
.
Notes
1.
2.
American Technical Ceramics type 100B or capacitor of same quality.
The striplines are on a double Cu-clad printed-circuit board, with epoxy fibre-glass dielectric (
ε
r
= 4.5); thickness
1
16
".
COMPONENT
DESCRIPTION
VALUE
DIMENSIONS
CATALOGUE No.
C1, C17
multilayer ceramic chip
capacitor; note 1
multilayer ceramic chip
capacitor; note 1
film dielectric trimmer
multilayer ceramic chip
capacitor; note 1
film dielectric trimmer
polyester capacitor
multilayer ceramic chip
capacitor
multilayer ceramic chip
capacitor; note 1
multilayer ceramic chip
capacitor; note 1
film dielectric trimmer
solid aluminium electrolytic
capacitor
2 turns of 1.6 mm enamelled
Cu wire
680 pF, 500 V
C2
39 pF, 500 V
C3, C16
C4
2 to 18 pF
43 pF, 500 V
2222 809 09003
C5
C6, C10
C7, C13
4 to 40 pF
330 nF
680 pF, 50 V
2222 809 08002
2222 852 13681
C8, C9
68 pF, 500 V
placed 2.5 mm from
transistor edge
placed 7 mm from
transistor edge
C11, C12
27 pF, 500 V
C14
C15
5 to 60 pF
10
μ
F, 40 V
2222 809 08003
L1
25 nH
int. diameter 4.3 mm
length 3.4 mm
leads 2
×
5 mm
int. diameter 6 mm
leads 2
×
5 mm
6 mm
×
48.8 mm
3 mm
×
27 mm
at 3 mm from
transistor edge
6
×
42.9 mm
int. diameter 4 mm
length 3.4 mm
leads 2
×
5 mm
L2
4 turns closely wound
1.1 mm enamelled Cu wire
stripline; note 2
stripline; note 2
120 nH
L3
L4
30
48
L5
L6
stripline; note 2
2 turns of 1.6 mm enamelled
Cu wire
30
24 nH
R1, R2
carbon resistor
10
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