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參數(shù)資料
| 型號： | BLV33 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | VHF linear power transistor(VHF線性功率晶體管) |
| 中文描述： | VHF BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | CERAMIC, SOT-147, 4 PIN |
| 文件頁數(shù)： | 10/20頁 |
| 文件大?。?/td> | 130K |
| 代理商： | BLV33 |
1996 Oct 10
10
Philips Semiconductors
Product specification
VHF linear power transistor
BLV33
Fig.11 Intermodulation distortion and power gain
as a functions of output power.
V
CE
= 25 V; I
C
= 3.2 A; f
vision
= 224.25 MHz.
(1) T
h
= 25
°
C.
(2) T
h
= 70
°
C.
handbook, halfpage
(dB)
10
20
30
40
64
48
MGG115
52
56
60
10
0
8
6
4
2
Gp
(dB)
Po sync (W)
(2)
(2)
Gp
dim
(1)
(1)
Fig.12 Cross-modulation distortion as a function of
output power.
V
CE
= 25 V; I
C
= 3.2 A; f
vision
= 224.25 MHz.
(1) T
h
= 25
°
C.
(2) T
h
= 70
°
C.
handbook, halfpage
0
20
40
10
0
20
(1)
(2)
MGG116
Po sync (W)
dcm
(%)
Three-tone test method (vision carrier
8 dB, sound carrier
7 dB, sideband signal
16 dB), zero dB corresponds to peak
sync level (see Fig.11).
Two-tone test method (vision carrier 0 dB, sound carrier
7 dB), zero dB corresponds to peak sync level.
Cross-modulation distortion (d
cm
) is the voltage variation (%) of sound carrier when vision carrier is switched from
0 dB to
20 dB (see Fig.12).
Ruggedness in class-A operation
The BLV33 is capable of withstanding a full load mismatch corresponding to VSWR = 50 : 1 through all phases up to
30 W (RMS) or 40 W (PEP) under the following conditions: V
CE
= 25 V; I
C
= 3.2 A; T
h
= 70
°
C; f = 224.25 MHz;
R
th mb-h
= 0.15 K/W.
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