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參數(shù)資料
| 型號： | BLV2040 |
| 英文描述： | TRANSISTOR | BJT | NPN | 28V V(BR)CEO | 300MA I(C) | SOT-409B |
| 中文描述： | 晶體管|晶體管|叩| 28V的五（巴西）總裁| 300mA的一（c）|的SOT - 409B |
| 文件頁數(shù)： | 6/11頁 |
| 文件大?。?/td> | 81K |
| 代理商： | BLV2040 |
August 1986
6
Philips Semiconductors
Product specification
VHF power transistor
BLV20
APPLICATION INFORMATION
R. F. performance in c.w. operation (unneutralized common-emitter class-B circuit)
T
h
= 25
°
C
List of components:
f (MHz)
V
CE
(V)
28
P
L
(W)
8
P
S
(W)
<
0,5
G
p
(dB)
>
12
I
C
(A)
<
0,44
η
(%)
>
65
z
i
(
)
1,8
+
j0,7
Y
L
(mS)
18
j20
175
C1 = C7 = 2,5 to 20 pF film dielectric trimmer (cat. no. 2222 809 07004)
C2 = C6 = 5 to 60 pF film dielectric trimmer (cat. no. 2222 809 07011)
C3 = 27 pF ceramic capacitor (500 V)
C4 = 120 pF ceramic capacitor (500 V)
C5 = 100 nF polyester capacitor
L1 = 1 turn Cu wire (1,6 mm); int. dia. 8,4 mm; leads 2
×
5 mm
L2 = 7 turns closely wound enamelled Cu wire (0,5 mm); int. dia. 3 mm; leads 2
×
5 mm
L3 = L8 = Ferroxcube wide band h.f. choke, grade 3B (cat. no. 4312 020 36640)
L4 = L5 = strip (12 mm
×
6 mm); tap for C3 at 5 mm from transistor
L6 = 3 turns closely wound enamelled Cu wire (1,0 mm); int. dia. 9,0 mm; leads 2
×
5 mm
L7 = 3 turns closely wound enamelled Cu wire (1,0 mm); int. dia. 8,2 mm; leads 2
×
5 mm
L4 and L5 are strips on a double Cu-clad printed-circuit board with epoxy fibre-glass dielectric, thickness 1/16".
R1 = R2 = 10
carbon resistor
Component layout and printed-circuit board for 175 MHz test circuit see Fig.8.
Fig.7 Test circuit; c.w. class-B.
handbook, full pagewidth
MGP253
50
50
C1
L1
L3
R1
L2
L6
L5
L7
L4
C2
C3
T.U.T.
C4
C5
+
VCC
C6
C7
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