參數(shù)資料
型號(hào): BLT92
廠商: NXP Semiconductors N.V.
英文描述: UHF power transistor
中文描述: 超高頻大功率晶體管
文件頁(yè)數(shù): 3/10頁(yè)
文件大?。?/td> 56K
代理商: BLT92
May 1989
3
Philips Semiconductors
Product specification
UHF power transistor
BLT92/SL
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
THERMAL RESISTANCE
Dissipation = 10 W; T
mb
= 25
°
C
From junction to mounting base (f
>
800 MHz)
Collector-base voltage (open emitter)
Collector-emitter voltage (open base)
Emitter-base voltage (open collector)
Collector current
DC or average
(peak value); f
>
800 MHz
Total power dissipation
at T
amb
<
120
°
C; f
>
800 MHz
Storage temperature range
Operating junction temperature
V
CBO
V
CEO
V
EBO
max.
max.
max.
20 V
10 V
3.0 V
I
C
; I
C(AV)
I
CM
max.
max.
1.2 A
3.6 A
P
tot
T
stg
T
j
max.
65 to
+
150
°
C
max.
10 W
200
°
C
R
th j-mb(RF)
max.
6.0 K/W
Fig.2 Total power dissipation as a function of temperature.
(1) Short-time RF operation during mismatch (f
>
800 MHz).
(2) Continuous RF operation (f
>
800 MHz).
handbook, halfpage
(W)
0
(1)
200
0
4
8
12
16
40
80
120
160
MDA297
Tmb (
°
C)
(2)
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