參數(shù)資料
型號(hào): BLT92
廠商: NXP Semiconductors N.V.
英文描述: UHF power transistor
中文描述: 超高頻大功率晶體管
文件頁(yè)數(shù): 2/10頁(yè)
文件大小: 56K
代理商: BLT92
May 1989
2
Philips Semiconductors
Product specification
UHF power transistor
BLT92/SL
DESCRIPTION
NPN silicon planar epitaxial transistor
primarily intended for use in handheld
radio stations in the 900 MHz
communications band.
This device has been designed
specifically for class-B operation.
FEATURES
internal input matching capacitor
for a high power gain
gold metallization ensures
excellent reliability
The transistor has a 4-lead studless
envelope with a ceramic cap
(SOT122D). All leads are isolated
from the mounting base.
PINNING
1 = collector
2 = emitter
3 = base
4 = emitter
QUICK REFERENCE DATA
RF performance at T
mb
= 25
°
C in a common-emitter class-B circuit
PIN CONFIGURATION
MODE OF OPERATION
V
CE
(V)
f
(MHz)
P
L
(W)
G
p
(dB)
>
7.0
η
C
(%)
>
50
CW (class-B)
7.5
900
3.0
Fig.1 Simplified outline, SOT122D.
handbook, halfpage
2
3
1
4
MSB055
PRODUCT SAFETY This device incorporates beryllium oxide (BeO), the dust of which is toxic. The device is
entirely safe provided that the internal BeO disc is not damaged.
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