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參數(shù)資料
| 型號(hào)： | BLT13 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類(lèi)： | 小信號(hào)晶體管 |
| 英文描述： | UHF power transistor |
| 中文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, MS-012AA |
| 封裝： | PLASTIC, SO-8 |
| 文件頁(yè)數(shù)： | 4/8頁(yè) |
| 文件大?。?/td> | 54K |
| 代理商： | BLT13 |
1996 Apr 12
4
Philips Semiconductors
Preliminary specification
UHF power transistor
BLT13
APPLICATION INFORMATION
RF performance at T
s
≤
60
°
C in a common emitter test circuit (note 1).
Note
1.
T
s
is the temperature at the soldering point of the collector pin.
Ruggedness in class-AB operation
The BLT13 is capable of withstanding a load mismatch corresponding to VSWR = 6 : 1 through all phases under the
following conditions:
δ
= 1 : 8; t
p
≤
5 ms; f = 1800 MHz; V
CE
= 8.5 V; P
L
= 2 W; T
s
≤
60
°
C.
MODE OF OPERATION
f
(MHz)
V
CE
(V)
I
CQ
(mA)
P
L
(W)
G
p
(dB)
≥
6
typ. 8.5
η
C
(%)
≥
50
typ. 65
Pulsed, class-AB;
δ
= 1 : 8; t
p
≤
5 ms
1800
6
2
2
Fig.2
Power gain and collector efficiency as
functions of load power; typical values.
Pulsed, class-AB;
δ
= 1 : 8; t
≤
5 ms; f = 1800 MHz; V
CE
= 6 V;
I
CQ
= 2 mA; tuned at P
L
= 2 W; T
s
≤
60
°
C.
handbook, halfpage
(dB)
0
3
0
2
MGD236
4
6
8
1
2
PL (W)
100
η
C
(%)
η
C
80
20
40
0
60
Gp
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