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參數(shù)資料
| 型號(hào)： | BLT13 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | UHF power transistor |
| 中文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, MS-012AA |
| 封裝： | PLASTIC, SO-8 |
| 文件頁(yè)數(shù)： | 3/8頁(yè) |
| 文件大小： | 54K |
| 代理商： | BLT13 |
1996 Apr 12
3
Philips Semiconductors
Preliminary specification
UHF power transistor
BLT13
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
THERMAL CHARACTERISTICS
Note to the “Limiting values” and “Thermal characteristics”
1.
T
s
is the temperature at the soldering point of the collector pin.
CHARACTERISTICS
T
j
= 25
°
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
stg
T
j
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
total power dissipation
storage temperature
operating junction temperature
open emitter
open base
open collector
65
20
10
2.5
1
1
+150
175
V
V
V
A
W
°
C
°
C
T
s
= 130
°
C; note 1
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-s
thermal resistance from junction to
soldering point
P
tot
= 1 W; T
s
= 130
°
C; note 1
45
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CES
h
FE
C
c
C
re
collector-base breakdown voltage
collector-emitter breakdown voltage
emitter-base breakdown voltage
collector leakage current
DC current gain
collector capacitance
feedback capacitance
open emitter; I
C
= 5 mA
open base; I
C
= 10 mA
open collector; I
E
= 1 mA
V
CE
= 6 V; V
BE
= 0
V
CE
= 5 V; I
C
= 100 mA
V
CB
= 6 V; I
E
= i
e
= 0; f = 1 MHz
V
CE
= 6 V; I
C
= 0; f = 1 MHz
20
10
2.5
30
0.1
150
8
6
V
V
V
mA
pF
pF
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