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參數(shù)資料
| 型號： | BLS2731-50 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | Microwave power transistor(微波功率晶體管) |
| 中文描述： | S BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | HERMETIC SEALED, CERAMIC, SOT-422A, 3 PIN |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 68K |
| 代理商： | BLS2731-50 |
1998 Jan 30
3
Philips Semiconductors
Product specification
Microwave power transistor
BLS2731-50
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
THERMAL CHARACTERISTICS
Note
1.
Equivalent thermal impedance under pulsed microwave operating conditions.
CHARACTERISTICS
T
j
= 25
°
C unless otherwise specified.
APPLICATION INFORMATION
RF performance at T
h
= 25
°
C in a common-base test circuit.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CBO
V
CES
V
EBO
I
CM
P
tot
T
stg
T
j
T
sld
collector-base voltage
collector-emitter voltage
emitter-base voltage
peak collector current
total power dissipation
storage temperature
operating junction temperature
soldering temperature
open emitter
R
BE
= 0
open collector
t
p
≤
100
μ
s;
δ ≤
10%
t
p
= 100
μ
s;
δ
= 10%; T
mb
= 25
°
C
65
75
75
2
6
80
+200
200
235
V
V
V
A
W
°
C
°
C
°
C
up to 0.2 mm from ceramic cap;
t
≤
10 s
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Z
th j-h
thermal impedance from junction to heatsink
t
p
= 100
μ
s;
δ
= 10%; note 1
0.3
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
1.5
3
0.3
UNIT
V
(BR)CBO
V
(BR)CES
I
CBO
I
CES
I
EBO
h
FE
C
c
collector-base breakdown voltage
collector-emitter breakdown voltage I
C
= 15 mA; V
BE
= 0
collector leakage current
collector leakage current
emitter leakage current
DC current gain
collector capacitance (die only)
I
C
= 15 mA; open emitter
75
75
40
30
V
V
mA
mA
mA
V
CB
= 40 V; I
E
= 0
V
CE
= 40 V; V
BE
= 0
V
EB
= 1.5 V; I
C
= 0
V
CB
= 5 V; I
C
= 1.5 A
V
CE
= 1 V; I
E
= i
e
= 0;
f = 1 MHz
pF
MODE OF OPERATION
f
(GHz)
V
CE
(V)
P
L
(W)
≥
50
typ. 60
G
p
(dB)
≥
8
typ. 9
η
C
(%)
≥
35
typ. 40
Class-C; t
p
= 100
μ
s;
δ
= 10%
2.7 to 3.1
40
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