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參數(shù)資料
| 型號(hào)： | BLF2047 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF power LDMOS transistor(UHF 功率 LDMOS晶體管) |
| 中文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | SOT-502A, 2 PIN |
| 文件頁數(shù)： | 3/12頁 |
| 文件大?。?/td> | 101K |
| 代理商： | BLF2047 |
1999 Dec 02
3
Philips Semiconductors
Product specification
UHF power LDMOS transistor
BLF2047
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
THERMAL CHARACTERISTICS
Note
1.
Determined under specified RF operating conditions, based on maximum peak junction temperature.
CHARACTERISTICS
T
j
= 25
°
C unless otherwise specified.
SYMBOL
PARAMETER
MIN.
MAX.
UNIT
V
DS
V
GS
I
D
T
stg
T
j
drain-source voltage
gate-source voltage
DC drain current
storage temperature
junction temperature
65
65
±
15
9
+150
200
V
V
A
°
C
°
C
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-h
thermal resistance from junction to heatsink T
h
= 25
°
C, P
tot
= 152 W, note 1
1.15
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
4
0.17
3.4
MAX.
3.5
10
250
UNIT
V
(BR)DSS
V
GSth
I
DSS
I
DSX
I
GSS
g
fs
R
DSon
C
rss
drain-source breakdown voltage
gate-source threshold voltage
drain-source leakage current
on-state drain current
gate leakage current
forward transconductance
drain-source on-state resistance
feedback capacitance
V
GS
= 0; I
D
= 1.4 mA
V
DS
= 10 V; I
D
= 140 mA
V
GS
= 0; V
DS
= 26 V
V
GS
=V
GSth
+ 9 V; V
DS
= 10 V
V
GS
=
±
15 V; V
DS
= 0
V
DS
= 10 V; I
D
= 5 A
V
GS
=V
GSth
+ 9 V; I
D
= 5 A
V
GS
= 0; V
DS
= 26 V; f = 1 MHz
65
1.5
18
V
V
μ
A
A
nA
S
pF
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