參數(shù)資料
型號: BGY66B
廠商: NXP Semiconductors N.V.
元件分類: 運動控制電子
英文描述: 120 MHz, 25 dB gain reverse amplifier
封裝: BGY66B<SOT115J|<<<1<Always Pb-free,;
文件頁數(shù): 3/8頁
文件大?。?/td> 90K
代理商: BGY66B
BGY66B
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 5 — 28 September 2010
3 of 8
NXP Semiconductors
BGY66B
120 MHz, 25 dB gain reverse amplifier
5. Characteristics
[1]
f
p
= 55.25 MHz; V
p
= 48 dBmV; f
q
= 61.25 MHz; V
q
= 48 dBmV; measured at f
p
+ f
q
= 116.5 MHz.
Measured according to DIN45004B;
f
p
= 111.25 MHz; V
p
= V
o
; f
q
= 118.25 MHz; V
q
= V
o
6 dB; f
r
= 120.25 MHz; V
r
= V
o
6 dB; measured at f
p
+ f
q
f
r
= 109.25 MHz.
The module normally operates at V
B
= 24 V, but is able to withstand supply transients up to 30 V.
[2]
[3]
Table 5.
Bandwidth 5 MHz to 120 MHz; V
B
= 24 V; T
mb
= 30
°
C; Z
S
= Z
L
= 75
Ω
; unless otherwise specified.
Symbol Parameter
Conditions
G
p
power gain
f = 10 MHz
SL
slope cable equivalent
FL
flatness of frequency response
s
11
input return losses
s
22
output return losses
CTB
composite triple beat
14 channels flat; V
o
= 48 dBmV;
measured at 67.25 MHz
X
mod
cross modulation
14 channels flat; V
o
= 48 dBmV;
measured at 67.25 MHz
d
2
second order distortion
V
o
output voltage
d
im
=
60 dB
F
noise figure
f = 120 MHz
I
tot
total current consumption (DC)
Characteristics
Min
24.5
0.2
-
20
20
-
Typ
-
-
-
-
-
-
Max
25.5
+0.5
±
0.2
-
-
66
Unit
dB
dB
dB
dB
dB
dB
-
-
54
dB
[1]
-
-
-
-
-
70
-
5
135
dB
dBmV
dB
mA
[2]
60
-
[3]
115
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