參數(shù)資料
型號: BGY66B
廠商: NXP Semiconductors N.V.
元件分類: 運動控制電子
英文描述: 120 MHz, 25 dB gain reverse amplifier
封裝: BGY66B<SOT115J|<<<1<Always Pb-free,;
文件頁數(shù): 2/8頁
文件大?。?/td> 90K
代理商: BGY66B
BGY66B
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 5 — 28 September 2010
2 of 8
NXP Semiconductors
BGY66B
120 MHz, 25 dB gain reverse amplifier
2. Pinning information
Table 2.
Pin
1
2
3
5
7
8
9
3. Ordering information
Table 3.
Type number
4. Limiting values
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
V
i
RF input voltage
T
stg
storage temperature
T
mb
mounting base temperature
Pinning
Description
input
common
common
+V
B
common
common
output
Simplified outline
Graphic symbol
9
1 3 5 7
2 3 7 8
5
9
1
sym095
Ordering information
Package
Name
-
Description
Rectangular single-ended package; aluminium flange;
2 vertical mounting holes; 2
×
6-32 UNC and 2 extra
horizontal mounting holes; 7 gold-plated in-line leads
Version
SOT115J
BGY66B
Limiting values
Conditions
Min
-
40
20
Max
65
+100
+100
Unit
dBmV
°
C
°
C
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