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參數(shù)資料
| 型號： | BGY212A |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 衰減器 |
| 英文描述： | UHF amplifier module |
| 中文描述： | 1710 MHz - 1785 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER |
| 封裝： | PLASTIC CAP, LEADLESS SURFACE MOUNT, SOT482C, 4 |
| 文件頁數(shù)： | 4/11頁 |
| 文件大?。?/td> | 132K |
| 代理商： | BGY212A |
1999 Aug 23
4
Philips Semiconductors
Preliminary specification
UHF amplifier module
BGY212A
Fig.2
Load power as a function of control voltage;
typical values.
Z
S
= Z
L
= 50
; V
S
= 3.5 V; P
D
= 0 dBm;
T
mb
= 25
°
C;
δ
= 1 : 8; t
p
= 575
μ
s.
0
1
2
3
1
1.5
2
2.5
V
C
(V)
P
L
(W)
1785MHz
1710MHz
Fig.3
Load power as a function of supply voltage;
typical values.
Z
S
= Z
L
= 50
; V
C
= 2.2 V; P
D
= 0 dBm;
T
mb
= 25
°
C;
δ
= 1 : 8; t
p
= 575
μ
s.
0
1
2
3
4
2
3
4
5
V
S
(V)
P
L
(W)
1710MHz
1785MHz
Fig.4
Efficiency as a function of load power;
typical values.
Z
S
= Z
L
= 50
; V
S
= 3.5 V; P
D
= 0 dBm;
T
mb
= 25
°
C;
δ
= 1 : 8; t
p
= 575
μ
s.
0
10
20
30
40
50
0
0.5
1
1.5
2
2.5
P
L
(W)
η
(%)
1785MHz
1710MHz
Fig.5
Load power as a function of frequency;
typical values.
Z
S
= Z
L
= 50
; V
S
= 3.5 V; P
D
= 0 dBm; V
C
= 2.2 V;
T
mb
= 25
°
C;
δ
= 1 : 8; t
p
= 575
μ
s.
0
1700
1
2
3
1750
1800
f (MHz)
P
L
(W)
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