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參數(shù)資料
| 型號： | BGY212A |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 衰減器 |
| 英文描述： | UHF amplifier module |
| 中文描述： | 1710 MHz - 1785 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER |
| 封裝： | PLASTIC CAP, LEADLESS SURFACE MOUNT, SOT482C, 4 |
| 文件頁數(shù)： | 3/11頁 |
| 文件大小： | 132K |
| 代理商： | BGY212A |
1999 Aug 23
3
Philips Semiconductors
Preliminary specification
UHF amplifier module
BGY212A
CHARACTERISTICS
Z
S
= Z
L
= 50
; P
D
= 0 dBm; V
S
= 3.5 V; V
C
≤
2.2 V; f = 1710 to 1785 MHz; T
mb
= 25
°
C;
δ
= 1 : 8; t
p
= 575
μ
s unles
otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
μ
A
mA
mA
dBm
dBm
dBm
dB
%
dBc
dBc
I
Q
leakage current
V
C
= 0.2 V
V
C
= 0.2 V; V
S
= 7 V
adjust V
C
for P
L
= 32 dBm
V
C
= 2.2 V; V
S
= 3.5 V
V
C
= 2.2 V; V
S
= 3.2 V
V
C
= 2.2 V; V
S
= 3.2 V; T
mb
= 85
°
C
P
L
= 32 dBm
P
L
= 32 dBm
P
L
= 32 dBm
P
L
= 32 dBm
P
L
= 2 to 32 dBm
V
S
= 3.2 to 4.1 V; P
D
=
3 to 3 dBm;
V
C
= 0 to 2.2 V; P
L
≤
33 dBm;
VSWR
≤
8 : 1 through all phases
V
C
= 0.2 V; P
D
= 3 dBm
32
31
5
33.2
32.3
31.8
32
40
10
20
3
35
40
3 : 1
60
I
CM
P
L
peak control current
load power
G
p
η
H
2
H
3
VSWR
in
power gain
efficiency
second harmonic
third harmonic
input VSWR
stability
dBc
isolation
control bandwidth
noise power
tbd
36
73
33
71
dBm
MHz
dBm
P
n
P
L
= 2 to 32 dBm;
bandwidth = 100 kHz; 20 MHz above
transmission band
P
D
with 3% AM; f = 100 kHz;
P
L
= 2 to 32 dBm
P
D
=
0.5 to 0.5 dBm;
P
L
= 2 to 32 dBm
P
L
=
8 to +2 dBm
P
L
= 2 to 32 dBm
P
L
= 32 dBm; f = 1785 MHz
P
L
(1805 MHz) / P
D
(1765 MHz)
P
L
= 2 to 32 dBm; time to settle
within
0.5 dB of final P
L
P
L
= 2 to 32 dBm; time to fall below
33 dBm
V
S
= 4.1 V; adjust V
C
for
P
L
= 33 dBm; VSWR
≤
8 : 1 through
all phases
AM/AM conversion
5
8
%
AM/PM conversion
tbd
deg/dB
control slope
tbd
tbd
28
30
dB / V
dB / V
dB
T
X
/ R
X
conversion
t
r
carrier rise time
1.5
2
μ
s
t
f
carrier fall time
1.5
2
μ
s
ruggedness
no degradation
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