參數(shù)資料
型號: BGY204
廠商: NXP SEMICONDUCTORS
元件分類: 衰減器
英文描述: UHF amplifier module
中文描述: 880 MHz - 915 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER
封裝: SOT-321B, 4 PIN
文件頁數(shù): 3/11頁
文件大?。?/td> 61K
代理商: BGY204
1996 May 21
3
Philips Semiconductors
Product specification
UHF amplifier module
BGY204
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
CHARACTERISTICS
Z
S
= Z
L
= 50
; P
D
= 1 mW; V
S
= 4.8 V; V
C
3.5 V; f = 880 to 915 MHz; T
mb
= 25
°
C;
δ
= 1 : 8; t
p
= 575
μ
s;
unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
S
V
C
P
D
P
L
T
stg
T
mb
DC supply voltage
DC control voltage
input drive power
load power
storage temperature
operating mounting base temperature
P
L
= 0
40
30
8
4.5
2
4
+100
+100
V
V
mW
W
°
C
°
C
V
S
6.5 V; Z
L
= 50
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
I
Q
I
C
P
L
G
p
η
H
2
H
3
VSWR
in
leakage current
control current
load power
power gain
efficiency
second harmonic
third harmonic
input VSWR
stability
V
C
= 0.5 V
adjust V
C
for P
L
= 3.2 W
3.2
35
40
45
0.2
0.5
40
40
2.5 : 1
60
mA
mA
W
dB
%
dBc
dBc
adjust V
C
for P
L
= 3.2 W
adjust V
C
for P
L
= 3.2 W
adjust V
C
for P
L
= 3.2 W
adjust V
C
for P
L
= 3.2 W
adjust V
C
for P
L
= 3.2 W
P
D
= 0.5 to 2 mW; V
S
= 4 to 6.5 V;
V
C
= 0 to 3.5 V; P
L
3.2 W;
VSWR
6 : 1 through all phases;
V
C
= 0.5 V
dBc
isolation
control bandwidth
noise power
1
36
85
dBm
MHz
dBm
P
n
P
L
= 3.2 W; bandwidth = 30 kHz;
20 MHz above transmitter band
V
S
= 6.5 V; adjust V
C
for P
L
= 3.2 W;
VSWR
10 : 1 through all phases
ruggedness
no degradation
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