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參數(shù)資料
| 型號： | BFV469 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | CANMS3126F16-26SF0 |
| 中文描述： | 0.1 A, 100 V, NPN, Si, POWER TRANSISTOR, TO-126 |
| 文件頁數(shù)： | 3/8頁 |
| 文件大小： | 43K |
| 代理商： | BFV469 |
1999 Apr 26
3
Philips Semiconductors
Product specification
NPN high-voltage transistor
BFV469
THERMAL CHARACTERISTICS
Note
1.
Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
amb
= 25
°
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-a
R
th j-mb
thermal resistance from junction to ambient
thermal resistance from junction to mounting base
note 1
100
10
K/W
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
I
CBO
I
EBO
h
FE
collector cut-off current
emitter cut-off current
DC current gain
I
E
= 0; V
CB
= 100 V
I
C
= 0; V
EB
= 4 V
V
CE
= 10 V; see Fig.2
I
C
= 10 mA
I
C
= 50 mA
I
C
= 30 mA; I
B
= 5 mA
I
C
= i
c
= 0; V
CB
= 25 V; f = 1 MHz
I
C
= 20 mA; V
CE
= 20 V; f = 100 MHz
100
100
nA
nA
150
20
150
200
1.5
V
CEsat
C
re
f
T
collector-emitter saturation voltage
feedback capacitance
transition frequency
mV
pF
MHz
Fig.2 DC current gain; typical values.
handbook, full pagewidth
0
10
1
hFE
300
100
200
MGD846
1
10
IC (mA)
10
2
V
CE
= 10 V.
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