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參數(shù)資料
| 型號(hào)： | BFS17W |
| 廠商： | NXP Semiconductors N.V. |
| 元件分類： | 晶體管 |
| 英文描述： | NPN 1 GHz wideband transistor |
| 封裝： | BFS17W<SOT323 (SC-70)|<<http://www.nxp.com/packages/SOT323.html<1<week 30, 2003,;BFS17W<SOT323 (SC-70)|<<http://www.nxp.com/packages/SOT323.html<1<week 30, 2003,; |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 170K |
| 代理商： | BFS17W |
1995 Sep 04
2
NXP Semiconductors
Product specification
NPN 1 GHz wideband transistor
BFS17W
APPLICATIONS
Primarily intended as a mixer,
oscillator and IF amplifier in UHF and
VHF tuners.
DESCRIPTION
Silicon NPN transistor in a plastic
SOT323 (S-mini) package. The
BFS17W uses the same crystal as
the SOT23 version, BFS17.
PINNING
PIN
DESCRIPTION
1
2
3
base
emitter
collector
Fig.1 SOT323
handbook, 2 columns
3
1
2
MBC870
Top view
Marking code:
E1
QUICK REFERENCE DATA
Note
1.
T
s
is the temperature at the soldering point of the collector pin.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1.
T
s
is the temperature at the soldering point of the collector pin.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
CBO
V
CEO
I
C
P
tot
h
FE
f
T
C
c
C
re
T
j
collector-base voltage
collector-emitter voltage
DC collector current
total power dissipation
DC current gain
transition frequency
collector capacitance
feedback capacitance
junction temperature
25
90
1.6
0.8
0.75
25
15
50
300
1.5
175
V
V
mA
mW
up to T
s
= 118
C; note 1
I
C
= 2 mA; V
CE
= 1 V
I
C
= 25 mA; V
CE
= 5 V
I
E
= 0; V
CB
= 10 V; f = 1 MHz
I
C
= 1 mA; V
CE
= 5 V; f = 1 MHz
GHz
pF
pF
C
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
stg
T
j
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
total power dissipation
storage temperature
junction temperature
open emitter
open base
open collector
65
25
15
2.5
50
300
+150
175
V
V
V
mA
mW
C
C
T
s
= 118
C; note 1
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BFS17W T/R | 制造商:NXP Semiconductors 功能描述:Trans GP BJT NPN 15V 0.05A 3-Pin SC-70 T/R |
| BFS17W,115 | 功能描述:射頻雙極小信號(hào)晶體管 NPN 15V 1GHZ RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
| BFS17W,115-CUT TAPE | 制造商:NXP 功能描述:BFS17W Series 15 V 300 mW 1 GHz SMT NPN Wideband Transistor - SOT-323 |
| BFS17W,135 | 功能描述:射頻雙極小信號(hào)晶體管 Single NPN 15V 50mA 300mW 25 1.6GHz RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
| BFS17W | 制造商:NXP Semiconductors 功能描述:TRANSISTOR NPN RF SOT-323 |
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