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參數(shù)資料
| 型號： | BFS17A_2 |
| 廠商： | NXP Semiconductors N.V. |
| 英文描述： | NPN 3GHz wideband transistor(NPN 3G赫茲 寬頻晶體管) |
| 中文描述： | 叩3GHz的寬帶晶體管（npn型的3G赫茲寬頻晶體管） |
| 文件頁數(shù)： | 3/6頁 |
| 文件大小： | 43K |
| 代理商： | BFS17A_2 |
September1995
3
Philips Semiconductors
Product specification
NPN 3 GHz wideband transistor
BFS17A
THERMAL CHARACTERISTICS
Note
1.
T
s
is the temperature at the soldering point of the collector pin.
CHARACTERISTICS
T
j
= 25
°
C unless otherwise specified.
Notes
1.
G
UM
is the maximum unilateral power gain, assuming S
12
is zero and
dB.
2.
d
im
=
60 dB (DIN 45004B); I
C
= 14 mA; V
CE
= 10 V; R
L
= 75
; T
amb
= 25
°
C;
V
p
= V
O
; f
p
= 795.25 MHz;
V
q
= V
O
6 dB; f
q
= 803.25 MHz;
V
r
= V
O
6 dB; f
r
= 805.25 MHz;
measured at f
(p+q
r)
= 793.25 MHz.
SYMBOL
PARAMETER
CONDITIONS
up to T
s
= 70
°
C; note 1
VALUE
UNIT
R
th j-s
thermal resistance from junction to soldering point
260
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
25
25
TYP.
90
90
2.8
MAX.
UNIT
I
CBO
h
FE
collector cut-off current
DC current gain
I
E
= 0; V
CB
= 10 V
I
C
= 2 mA; V
CE
= 1 V; T
amb
= 25
°
C
I
C
= 25 mA; V
CE
= 1 V; T
amb
= 25
°
C
I
C
= 25 mA; V
CE
= 5 V; f = 500 MHz;
T
amb
= 25
°
C
I
E
= 0; V
CB
= 10 V; f = 1 MHz;
T
amb
= 25
°
C
I
C
= 0; V
EB
= 0.5 V; f = 1 MHz
I
C
= 0; V
CE
= 5 V; f = 1 MHz
I
C
= 14 mA; V
CE
= 10 V; f = 800 MHz
50
nA
f
T
transition frequency
GHz
C
c
collector capacitance
0.7
pF
C
e
C
re
G
UM
emitter capacitance
feedback capacitance
maximum unilateral power gain
note 1
noise figure
1.25
0.6
13.5
pF
pF
dB
F
I
C
= 2 mA; V
CE
= 5 V; Z
S
= 60
;
f = 800 MHz; T
amb
= 25
°
C
note 2
2.5
dB
V
O
output voltage
150
mV
G
UM
10 log
S
2
1
S
11
2
–
1
S
22
2
–
--------------------------------------------------------------
=
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