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參數(shù)資料
| 型號： | BFS17A_2 |
| 廠商： | NXP Semiconductors N.V. |
| 英文描述： | NPN 3GHz wideband transistor(NPN 3G赫茲 寬頻晶體管) |
| 中文描述： | 叩3GHz的寬帶晶體管（npn型的3G赫茲寬頻晶體管） |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 43K |
| 代理商： | BFS17A_2 |
September1995
2
Philips Semiconductors
Product specification
NPN 3 GHz wideband transistor
BFS17A
DESCRIPTION
NPN transistor in a plastic SOT23 package.
APPLICATIONS
It is intended for RF applications such as oscillators
in TV tuners.
PINNING
PIN
DESCRIPTION
1
2
3
base
emitter
collector
Fig.1 SOT23.
Marking code:
E2p.
handbook, halfpage
MSB003
Top view
1
2
3
QUICK REFERENCE DATA
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note to the Quick reference data and the Limiting values
1.
T
s
is the temperature at the soldering point of the collector pin.
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
V
CBO
V
CEO
I
C
P
tot
f
T
collector-base voltage
collector-emitter voltage
DC collector current
total power dissipation
transition frequency
open emitter
open base
2.8
25
15
25
300
V
V
mA
mW
GHz
up to T
s
= 70
°
C; note 1
I
C
= 25 mA; V
CE
= 5 V; f = 500 MHz;
T
amb
= 25
°
C
I
C
= 14 mA; V
CE
= 10 V; f = 800 MHz
I
C
= 2 mA; V
CE
= 5 V; f = 800 MHz;
T
amb
= 25
°
C
d
im
=
60 dB; I
C
= 14 mA; V
CE
= 10 V;
R
L
= 75
; T
amb
= 25
°
C;
f
(p+q
r)
= 793.25 MHz
G
UM
F
maximum unilateral power gain
noise figure
13.5
2.5
dB
dB
V
O
output voltage
150
mV
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CM
P
tot
T
stg
T
j
collector-base voltage
collector-emitter voltage
emitter-base voltage
DC collector current
peak collector current
total power dissipation
storage temperature
junction temperature
open emitter
open base
open collector
65
25
15
2.5
25
50
300
+150
150
V
V
V
mA
mA
mW
°
C
°
C
up to T
s
= 70
°
C; note 1
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| BFS17AR | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Silicon NPN Planar RF Transistor |
| BFS17AR-GS08 | 制造商:Vishay Semiconductors 功能描述:TRANS GP BJT NPN 15V 0.025A 3PIN SOT-23 - Tape and Reel |
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