參數(shù)資料
型號: BFR505T
廠商: NXP Semiconductors N.V.
元件分類: 晶體管
英文描述: NPN 9 GHz wideband transistor
封裝: BFR505T<SOT416 (SOT416)|<<http://www.nxp.com/packages/SOT416.html<1<week 17, 2003,;
文件頁數(shù): 4/14頁
文件大小: 274K
代理商: BFR505T
2000 May 17
4
NXP Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFR505T
CHARACTERISTICS
T
j
= 25
C; unless otherwise specified.
Notes
1.
G
UM
is the maximum unilateral power gain, assuming S
12
is zero and
2
---------------------------------------------------------- dB
=
2.
I
C
= 5 mA; V
CE
= 6 V; R
L
= 50
; f = 900 MHz; T
amb
= 25
C; f
p
= 900 MHz; f
q
= 902 MHz; measured at
f
(2p-q)
= 898 MHz and at f
(2q-p)
= 904 MHz.
SYMBOL
PARAMETER
CONDITIONS
MIN.
60
TYP.
120
0.4
0.4
0.3
9
MAX.
UNIT
I
CBO
h
FE
C
c
C
e
C
re
f
T
collector cut-off current
DC current gain
collector capacitance
emitter capacitance
feedback capacitance
transition frequency
I
E
= 0; V
CB
= 6 V
I
C
= 5 mA; V
CE
= 6 V
I
E
= i
e
= 0; V
CB
= 6 V; f = 1 MHz
I
C
= i
c
= 0; V
EB
= 0.5 V; f = 1 MHz
I
C
= 0; V
CB
= 6 V; f = 1 MHz
I
C
= 5 mA; V
CE
= 6 V; f = 1 GHz;
T
amb
= 25
C
I
C
= 5 mA; V
CE
= 6 V; T
amb
= 25
C;
f = 900 MHz
f = 2 GHz
I
C
= 5 mA; V
CE
= 6 V; f = 900 MHz;
T
amb
= 25
C
s
=
opt
; I
C
= 1.25 mA; V
CE
= 6 V;
f = 900 MHz; T
amb
= 25
C
s
=
opt
; I
C
= 5 mA; V
CE
= 6 V;
f = 900 MHz; T
amb
= 25
C
s
=
opt
; I
C
= 1.25 mA; V
CE
= 6 V;
f = 2 GHz; T
amb
= 25
C
I
C
= 5 mA; V
CE
= 6 V; R
L
= 50
;
f = 900 MHz; T
amb
= 25
C
note 2
50
250
nA
pF
pF
pF
GHz
G
UM
maximum unilateral power gain;
note 1
13
17
10
14
dB
dB
dB
S
21
2
insertion power gain
F
noise figure
1.2
1.7
dB
1.6
2.1
dB
1.9
dB
P
L1
output power at 1 dB gain
compression
third-order intercept point
4
dBm
ITO
10
dBm
G
UM
10 log
S
1
1
S
11
S
22
2
相關(guān)PDF資料
PDF描述
BFR505T NPN 9 GHz wideband transistor
BFR505 NPN 9 GHz wideband transistor
BFR505 NPN 9 GHz wideband transistor
BFR505 NPN 9 GHz wideband transistor
BFR92AF Silicon NPN Planar RF Transistor
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BFR505T,115 功能描述:射頻雙極小信號晶體管 TAPE-7 TNS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel
BFR505T/R 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 15V V(BR)CEO | 18MA I(C) | SOT-23
BFR520 制造商:NXP Semiconductors 功能描述:Trans GP BJT NPN 15V 0.07A 3-Pin TO-236AB 制造商:NXP Semiconductors 功能描述:RF TRANSISTOR NPN SOT-23 制造商:NXP Semiconductors 功能描述:RF TRANSISTOR, NPN, SOT-23 制造商:NXP Semiconductors 功能描述:RF TRANSISTOR, NPN, SOT-23; Transistor Polarity:N Channel; Collector Emitter Voltage V(br)ceo:15V; Transition Frequency Typ ft:9GHz; Power Dissipation Pd:300mW; DC Collector Current:70mA; DC Current Gain hFE:120; RF Transistor ;RoHS Compliant: Yes
BFR520,215 功能描述:射頻雙極小信號晶體管 NPN 70MA 15V 9GHZ RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel
BFR520,215-CUT TAPE 制造商:NXP 功能描述:BFR520 Series 15 V 300 mW 9 GHz SMT NPN Wideband Transistor - SOT-23-3