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參數(shù)資料
| 型號： | BFR505T |
| 廠商： | NXP Semiconductors N.V. |
| 元件分類： | 晶體管 |
| 英文描述： | NPN 9 GHz wideband transistor |
| 封裝： | BFR505T<SOT416 (SOT416)|<<http://www.nxp.com/packages/SOT416.html<1<week 17, 2003,; |
| 文件頁數(shù)： | 2/14頁 |
| 文件大?。?/td> | 274K |
| 代理商： | BFR505T |
2000 May 17
2
NXP Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFR505T
FEATURES
Low current consumption
High power gain
Low noise figure
High transition frequency
Gold metallization ensures
excellent reliability
SOT416 (SC-75) package.
APPLICATIONS
Low power amplifiers, oscillators and
mixers particularly in RF portable
communication equipment (cellular
phones, cordless phones and pagers)
up to 2 GHz.
DESCRIPTION
NPN transistor in a plastic SOT416
(SC-75) package.
PINNING
PIN
DESCRIPTION
1
2
3
base
emitter
collector
lfpage
1
2
3
MBK090
Top view
Fig.1 SOT416.
Marking code:
N0.
QUICK REFERENCE DATA
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 60134).
Note
1.
T
s
is the temperature at the soldering point of the collector pin.
SYMBOL
PARAMETER
CONDITIONS
MIN.
60
TYP.
120
9
MAX.
UNIT
V
CBO
V
CES
I
C
P
tot
h
FE
f
T
collector-base voltage
collector-emitter voltage
DC collector current
total power dissipation
DC current gain
transition frequency
open emitter
R
BE
= 0
20
15
18
150
250
V
V
mA
mW
T
s
75
C; note 1
I
C
= 5 mA; V
CE
= 6 V; T
j
= 25
C
I
C
= 5 mA; V
CE
= 6 V; f = 1 GHz;
T
amb
= 25
C
I
C
= 5 mA; V
CE
= 6 V; f = 900 MHz;
T
amb
= 25
C
I
C
= 1.25 mA; V
CE
= 6 V;
f = 900 MHz; T
amb
= 25
C
GHz
G
UM
maximum unilateral power gain
17
dB
F
noise figure
1.2
1.7
dB
SYMBOL
PARAMETER
CONDITIONS
MIN.
65
MAX.
UNIT
V
CBO
V
CE
V
EBO
I
C
P
tot
T
stg
T
j
collector-base voltage
collector-emitter voltage
emitter-base voltage
DC collector current
total power dissipation
storage temperature
junction temperature
open emitter
R
BE
= 0
open collector
20
15
2.5
18
150
+150
150
V
V
V
mA
mW
C
C
T
s
75
C; note 1
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BFR505T,115 | 功能描述:射頻雙極小信號晶體管 TAPE-7 TNS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
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| BFR520 | 制造商:NXP Semiconductors 功能描述:Trans GP BJT NPN 15V 0.07A 3-Pin TO-236AB 制造商:NXP Semiconductors 功能描述:RF TRANSISTOR NPN SOT-23 制造商:NXP Semiconductors 功能描述:RF TRANSISTOR, NPN, SOT-23 制造商:NXP Semiconductors 功能描述:RF TRANSISTOR, NPN, SOT-23; Transistor Polarity:N Channel; Collector Emitter Voltage V(br)ceo:15V; Transition Frequency Typ ft:9GHz; Power Dissipation Pd:300mW; DC Collector Current:70mA; DC Current Gain hFE:120; RF Transistor ;RoHS Compliant: Yes |
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