- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄385136 > BFR505 (NXP Semiconductors N.V.) NPN 9 GHz wideband transistor PDF資料下載
參數(shù)資料
| 型號： | BFR505 |
| 廠商： | NXP Semiconductors N.V. |
| 元件分類： | 功率晶體管 |
| 英文描述： | NPN 9 GHz wideband transistor |
| 封裝： | BFR505<SOT23 (TO-236AB)|<<http://www.nxp.com/packages/SOT23.html<1<week 34, 2003,;BFR505/C<SOT23 (TO-236AB)|<<http://www.nxp.com/packages/SOT23.html<1<Always Pb-fre |
| 文件頁數(shù)： | 3/14頁 |
| 文件大?。?/td> | 184K |
| 代理商： | BFR505 |
BFR505
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 4 — 7 September 2011
3 of 14
NXP Semiconductors
BFR505
NPN 9 GHz wideband transistor
5. Limiting values
Table 5.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
V
CBO
collector-base voltage
V
CES
collector-emitter voltage
V
EBO
emitter-base voltage
I
C
DC collector current
P
tot
total power dissipation
T
stg
storage temperature
T
j
junction temperature
[1]
T
s
is the temperature at the soldering point of the collector tab.
6. Thermal characteristics
Table 6.
Symbol
R
th(j-s)
[1]
T
s
is the temperature at the soldering point of the collector tab.
7. Characteristics
Table 7.
T
j
= 25
C unless otherwise specified.
Symbol Parameter
I
CBO
collector cut-off current
h
FE
DC current gain
C
e
emitter capacitance
Limiting values
Conditions
open emitter
R
BE
= 0
Min
-
-
-
-
-
65
-
Max
20
15
2.5
18
150
+150
175
Unit
V
V
V
mA
mW
C
C
continuous
up to T
s
= 135
C
[1]
Thermal characteristics
Parameter
from junction to soldering point
Conditions
Typ
Unit
K/W
[1]
260
Characteristics
Conditions
I
E
= 0 A; V
CB
= 6 V
I
C
= 5 mA; V
CE
= 6 V
I
C
= i
c
= 0 A; V
EB
= 0.5 V;
f = 1 MHz
I
E
= i
e
= 0 A; V
CB
= 6 V;
f = 1 MHz
I
C
= i
c
= 0 A; V
CB
= 6 V;
f = 1 MHz
I
C
= 5 mA; V
CE
= 6 V;
f = 1 GHz
I
C
= 5 mA; V
CE
= 6 V;
T
amb
= 25
C; f = 900 MHz
I
C
= 5 mA; V
CE
= 6 V;
T
amb
= 25
C; f = 2 GHz
I
C
= 5 mA; V
CE
= 6 V;
T
amb
= 25
C; f = 900 MHz
Min
-
60
-
Typ
-
120
0.4
Max
50
250
-
Unit
nA
pF
C
c
collector capacitance
-
0.4
-
pF
C
re
feedback capacitance
-
0.3
-
pF
f
T
transition frequency
-
9
-
GHz
G
UM
maximum unilateral
power gain
[1]
-
17
-
dB
-
10
-
dB
S
21
2
insertion power gain
13
14
-
dB
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BFR505 | NPN 9 GHz wideband transistor |
| BFR505 | NPN 9 GHz wideband transistor |
| BFR92AF | Silicon NPN Planar RF Transistor |
| BFS17A | NPN 3 GHz wideband transistor |
| BFS17A | NPN 3 GHz wideband transistor |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BFR505,215 | 功能描述:射頻雙極小信號晶體管 NPN 15V 9GHZ RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
| BFR505/T1 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR NPN HF |
| bfr505215 | 制造商:Rochester Electronics LLC 功能描述: 制造商:NXP Semiconductors 功能描述:TRANSISTOR RF NPN 9GHZ SOT |
| BFR505T | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:NPN 9 GHz wideband transistor |
| BFR505T,115 | 功能描述:射頻雙極小信號晶體管 TAPE-7 TNS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。