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參數(shù)資料
| 型號： | BFR182T |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | Silicon NPN Planar RF Transistor(集電極電流35mA,低噪高增益放大器應(yīng)用的NPN平面型晶體管) |
| 中文描述： | 硅NPN平面射頻晶體管（集電極電流35毫安，低噪高增益放大器應(yīng)用的npn型平面型晶體管） |
| 文件頁數(shù)： | 2/4頁 |
| 文件大小： | 68K |
| 代理商： | BFR182T |
BFR182T/BFR182TW
Vishay Telefunken
www.vishay.de
FaxBack +1-408-970-5600
2 (4)
Rev. 2, 20-Jan-99
Document Number 85025
Electrical DC Characteristics
T
amb
= 25 C, unless otherwise specified
Parameter
Collector cut-off current
Collector-base cut-off current
Emitter-base cut-off current
Collector-emitter breakdown voltage I
C
= 1 mA, I
B
= 0
Collector-emitter saturation voltage
DC forward current transfer ratio
Test Conditions
Symbol
I
CES
I
CBO
I
EBO
V
(BR)CEO
V
CEsat
h
FE
h
FE
Min
Typ
Max Unit
100
100
1
V
CE
= 15 V, V
BE
= 0
V
CB
= 10 V, I
E
= 0
V
EB
= 1 V, I
C
= 0
A
nA
A
V
V
10
I
C
= 30 mA, I
B
= 3 mA
V
CE
= 6 V, I
C
= 5 mA
V
CE
= 8 V, I
C
= 20 mA
0.1
90
100
0.4
50
Electrical AC Characteristics
T
amb
= 25 C, unless otherwise specified
Parameter
Test Conditions
Symbol
f
T
f
T
C
cb
C
ce
C
eb
F
Min
Typ
5.5
7.5
0.3
0.2
0.65
1.5
Max
Unit
GHz
GHz
pF
pF
pF
dB
Transition frequency
V
CE
= 6 V, I
C
= 5 mA, f = 500 MHz
V
CE
= 8 V, I
C
= 20 mA, f = 500 MHz
V
CB
= 10 V, f = 1 MHz
V
CE
= 10 V, f = 1 MHz
V
EB
= 0.5 V, f = 1 MHz
V
CE
= 6 V, I
C
= 5 mA, Z
S
= Z
Sopt
,
f = 900 MHz
V
CE
= 6 V, I
C
= 5 mA, Z
S
= Z
Sopt
,
f = 1.75 GHz
V
CE
= 8 V, I
C
= 20 mA, Z
S
= 50 ,
Z
L
= Z
Lopt
, f = 900 MHz
V
CE
= 8 V, I
C
= 20 mA, Z
S
= 50 ,
Z
L
= Z
Lopt
, f = 1.75 GHz
V
CE
= 8 V, I
C
= 20 mA, f = 900 MHz,
Z
0
= 50
Collector-base capacitance
Collector-emitter capacitance
Emitter-base capacitance
Noise figure
F
2.0
dB
Power gain
G
pe
15
dB
G
pe
11
dB
Transducer gain
S
21e
2
14
dB
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| BFR182T_08 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Silicon NPN Planar RF Transistor |
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| BFR182T-GS08 | 制造商:Vishay Intertechnologies 功能描述: |
| BFR182TW | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Silicon NPN Planar RF Transistor |
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