- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄384145 > BFQ81 (Vishay Intertechnology,Inc.) Silicon NPN Planar RF Transistor PDF資料下載
參數(shù)資料
| 型號： | BFQ81 |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | Silicon NPN Planar RF Transistor |
| 中文描述： | 硅NPN平面射頻晶體管 |
| 文件頁數(shù)： | 2/10頁 |
| 文件大?。?/td> | 150K |
| 代理商： | BFQ81 |
BFQ81
Vishay Telefunken
www.vishay.de
FaxBack +1-408-970-5600
2 (10)
Rev. 3, 20-Jan-99
Document Number 85023
Electrical DC Characteristics
T
amb
= 25 C, unless otherwise specified
Parameter
Collector cut-off current
Collector-base cut-off current
Emitter-base cut-off current
Collector-emitter breakdown voltage I
C
= 1 mA, I
B
= 0
Collector-emitter saturation voltage
DC forward current transfer ratio
Test Conditions
Symbol
I
CES
I
CBO
I
EBO
V
(BR)CEO
V
CEsat
h
FE
h
FE
Min
Typ
Max Unit
100
100
10
V
CE
= 25 V, V
BE
= 0
V
CB
= 20 V, I
E
= 0
V
EB
= 2 V, I
C
= 0
A
nA
A
V
V
16
I
C
= 30 mA, I
B
= 3 mA
V
CE
= 10 V, I
C
= 5 mA
V
CE
= 10 V, I
C
= 15 mA
0.2
100
100
0.5
150
70
70
Electrical AC Characteristics
T
amb
= 25 C, unless otherwise specified
Parameter
Test Conditions
Symbol
f
T
f
T
C
cb
C
ce
C
eb
F
Min
Typ
4.2
5.8
0.35
0.2
1.1
1.4
Max
Unit
GHz
GHz
pF
pF
pF
dB
Transition frequency
V
CE
= 10 V, I
C
= 5 mA, f = 500 MHz
V
CE
= 10 V, I
C
= 15 mA, f = 500 MHz
V
CB
= 10 V, f = 1 MHz
V
CE
= 10 V, f = 1 MHz
V
EB
= 0.5 V, f = 1 MHz
V
CE
= 10 V, I
C
= 5 mA, Z
S
= 50 ,
f = 800 MHz
V
CE
= 10 V, I
C
= 5 mA, Z
S
= Z
Sopt
,
f = 2 GHz
V
CE
= 10 V, I
C
= 5 mA, Z
S
= 50 ,
Z
L
= Z
Lopt
, f = 800 MHz
V
CE
= 10 V, I
C
= 25 mA, d
IM
= 60 dB,
f
1
= 806 MHz, f
2
= 810 MHz,
Z
S
= Z
L
= 50
V
CE
= 10 V, I
C
= 25 mA, f = 800 MHz
Collector-base capacitance
Collector-emitter capacitance
Emitter-base capacitance
Noise figure
F
2.5
dB
Power gain
G
pe
15
dB
Linear output voltage – two
tone intermodulation test
V
1
= V
2
160
mV
Third order intercept point
IP
3
27
dBm
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BFQ81 | Silicon NPN Planar RF Transistor(集電極電流30mA,射頻放大器應(yīng)用的NPN平面型晶體管) |
| BFR181T | Silicon NPN Planar RF Transistor(集電極電流20mA,低噪高增益放大器應(yīng)用的NPN平面型晶體管) |
| BFR181TW | Silicon NPN Planar RF Transistor |
| BFR181T | Silicon NPN Planar RF Transistor |
| BFR182T | Silicon NPN Planar RF Transistor(集電極電流35mA,低噪高增益放大器應(yīng)用的NPN平面型晶體管) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BFQ81-GS08 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Silicon NPN Planar RF Transistor |
| BFQ82 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:NPN Silicon RF Transistor (For low-noise, high-gain amplifiers up to 2 GHz. Linear broadband applications at collector currents up to 40 mA.) |
| BFQP-BNN | 制造商:Amphenol Audio 功能描述: |
| BFR | 制造商:ITT 制造商全稱:ITT Industries 功能描述:Aerospace Avionic Equipment Geological Exploration |
| BFR 106 E6327 | 功能描述:射頻雙極小信號晶體管 NPN Silicon RF TRANSISTOR RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。