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參數(shù)資料
| 型號(hào)： | BFR181T |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | Silicon NPN Planar RF Transistor |
| 中文描述： | 硅NPN平面射頻晶體管 |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大?。?/td> | 68K |
| 代理商： | BFR181T |
BFR181T/BFR181TW
Vishay Telefunken
www.vishay.de
FaxBack +1-408-970-5600
Rev. 2, 20-Jan-99
1 (4)
Document Number 85024
Silicon NPN Planar RF Transistor
Electrostatic sensitive device.
Observe precautions for handling.
Applications
For low noise and high gain broadband amplifiers at
collector currents from 0.5 mA to 12 mA.
Features
Low noise figure
High power gain
13 581
2
3
1
94 9280
BFR181T Marking: RF
Plastic case (SOT 23)
1 = Collector, 2 = Base, 3 = Emitter
2
1
3
13 652
13 570
BFR181TW Marking: WRF
Plastic case (SOT 323)
1 = Collector, 2 = Base, 3 = Emitter
Absolute Maximum Ratings
T
amb
= 25 C, unless otherwise specified
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
Junction temperature
Storage temperature range
Test Conditions
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
tot
T
j
T
stg
Value
15
10
2
20
2
160
150
Unit
V
V
V
mA
mA
mW
C
C
T
amb
≤
78 C
–65 to +150
Maximum Thermal Resistance
T
amb
= 25 C, unless otherwise specified
Parameter
Junction ambient
on glass fibre printed board (25 x 20 x 1.5) mm
3
plated with 35 m Cu
Test Conditions
Symbol
R
thJA
Value
450
Unit
K/W
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| BFR181TE6327XT | 制造商:Infineon Technologies AG 功能描述:Trans GP BJT NPN 12V 0.02A 3-Pin SC-75 T/R |
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