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參數(shù)資料
| 型號(hào)： | BFQ67 |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | Silicon NPN Planar RF Transistor(集電極電流50mA,低噪聲小信號(hào)放大器應(yīng)用的NPN平面型晶體管) |
| 中文描述： | 硅NPN平面射頻晶體管（集電極電流為50mA，低噪聲小信號(hào)放大器應(yīng)用的npn型平面型晶體管） |
| 文件頁(yè)數(shù)： | 3/12頁(yè) |
| 文件大?。?/td> | 185K |
| 代理商： | BFQ67 |
BFQ67/BFQ67R/BFQ67W
Vishay Telefunken
www.vishay.de
FaxBack +1-408-970-5600
Rev. 3, 20-Jan-99
3 (12)
Document Number 85022
Electrical DC Characteristics
T
amb
= 25 C, unless otherwise specified
Parameter
Collector cut-off current
Collector-base cut-off current
Emitter-base cut-off current
Collector-emitter breakdown voltage I
C
= 1 mA, I
B
= 0
Collector-emitter saturation voltage
DC forward current transfer ratio
Test Conditions
Symbol
I
CES
I
CBO
I
EBO
V
(BR)CEO
V
CEsat
h
FE
Min
Typ
Max Unit
100
100
1
V
CE
= 20 V, V
BE
= 0
V
CB
= 15 V, I
E
= 0
V
EB
= 1 V, I
C
= 0
A
nA
A
V
V
10
I
C
= 50 mA, I
B
= 5 mA
V
CE
= 5 V, I
C
= 15 mA
0.1
100
0.4
150
65
Electrical AC Characteristics
T
amb
= 25 C, unless otherwise specified
Parameter
Test Conditions
Symbol
f
T
C
cb
C
ce
C
eb
F
Min
Typ
7.5
0.4
0.2
0.85
0.8
Max
Unit
GHz
pF
pF
pF
dB
Transition frequency
Collector-base capacitance
Collector-emitter capacitance
Emitter-base capacitance
Noise figure
V
CE
= 8 V, I
C
= 15 mA, f = 500 MHz
V
CB
= 10 V, f = 1 MHz
V
CE
= 8 V, f = 1 MHz
V
EB
= 0.5 V, f = 1 MHz
V
CE
= 8 V, Z
S
= Z
Sopt
, f = 800 MHz,
I
C
= 5 mA
V
CE
= 8 V, Z
S
= Z
Sopt
, f = 800 MHz,
I
C
= 15 mA
V
CE
= 8 V, Z
S
= 50 , f = 2 GHz,
I
C
= 5 mA
V
CE
= 8 V, Z
S
= 50 , f = 2 GHz,
I
C
= 15 mA
V
CE
= 8 V, Z
S
= 50 , Z
L
= Z
Lopt
,
I
C
= 15 mA, f = 800 MHz
V
CE
= 8 V, Z
S
= 50 , Z
L
= Z
Lopt
,
I
C
= 15 mA, f = 2 GHz
V
CE
= 8 V, I
C
= 15 mA, d
IM
= 60 dB,
f
1
= 806 MHz, f
2
= 810 MHz,
Z
S
= Z
L
= 50
V
CE
= 8 V, I
C
= 15 mA, f = 800 MHz
F
1.5
dB
F
2.5
dB
F
3.0
dB
Power gain
G
pe
15.5
dB
G
pe
8
dB
Linear output voltage – two
tone intermodulation test
V
1
= V
2
160
mV
Third order intercept point
IP
3
26
dBm
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BFQ67,215 | 功能描述:射頻雙極小信號(hào)晶體管 NPN 50MA 10V 8GHZ RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
| BFQ67,215-CUT TAPE | 制造商:NXP 功能描述:BFQ67 Series 10 V 300 mW 8 GHz Wideband NPN Transistor - SOT-23 |
| BFQ67_08 | 制造商:VISHAY 制造商全稱(chēng):Vishay Siliconix 功能描述:Silicon NPN Planar RF Transistor |
| BFQ67215 | 制造商:NXP Semiconductors 功能描述:RF WIDEBAND TRANSISTOR NPN 10V 8GHZ |
| BFQ67F | 制造商:VISHAY 制造商全稱(chēng):Vishay Siliconix 功能描述:Silicon NPN Planar RF Transistor |
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