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參數(shù)資料
| 型號： | BFQ136 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | NPN 4 GHz wideband transistor |
| 中文描述： | UHF BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | CERAMIC, SOT-122A, 4 PIN |
| 文件頁數(shù)： | 3/9頁 |
| 文件大?。?/td> | 73K |
| 代理商： | BFQ136 |
September 1995
3
Philips Semiconductors
Product specification
NPN 4 GHz wideband transistor
BFQ136
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
THERMAL RESISTANCE
CHARACTERISTICS
T
j
= 25
°
C unless otherwise specified.
Notes
1.
2.
Measured with emitter and base grounded.
G
UM
is the maximum unilateral power gain, assuming S
12
is zero and
S
1
S
11
–
3.
d
im
=
60 dB; I
C
= 500 mA; V
CE
= 15 V; R
L
= 75
; T
amb
= 25
°
C;
V
p
= V
o
at d
im
=
60 dB; f
p
= 795.25 MHz;
V
q
= V
o
6 dB; f
q
= 803.25 MHz;
V
r
= V
o
6 dB; f
r
= 805.25 MHz;
measured at f
(p
+
q
r)
= 793.25 MHz.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
stg
T
j
collector-base voltage
collector-emitter voltage
emitter-base voltage
DC collector current
total power dissipation
storage temperature
junction temperature
open emitter
open base
open collector
65
25
18
2
600
9
150
200
V
V
V
mA
W
°
C
°
C
up to T
c
= 100
°
C
SYMBOL
PARAMETER
THERMAL RESISTANCE
R
th j-c
thermal resistance from junction to case
11 K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
25
TYP.
75
7.0
40
4.0
0.8
4.0
MAX.
UNIT
μ
A
I
CBO
h
FE
C
c
C
e
C
re
C
cs
f
T
collector cut-off current
DC current gain
collector capacitance
emitter capacitance
feedback capacitance
collector-stud capacitance
transition frequency
I
E
= 0; V
CB
= 15 V
I
C
= 500 mA; V
CE
= 15 V
I
E
= i
e
= 0; V
CB
= 15 V; f = 1 MHz
I
C
= i
c
= 0; V
EB
= 0.5 V; f = 1 MHz
I
C
= 0; V
CE
= 15 V; f = 1 MHz
note 1
I
C
= 500 mA; V
CE
= 15 V;
f = 500 MHz
I
C
= 500 mA; V
CE
= 15 V;
f = 800 MHz; T
amb
= 25
°
C
note 3
75
pF
pF
pF
pF
GHz
G
UM
maximum unilateral power gain
(note 2)
output voltage (see Fig.2)
12.5
dB
V
o
2.5
V
G
UM
10 log
2
1
S
22
–
--------------------------------------------------------------
dB.
=
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