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參數(shù)資料
| 型號： | BFP93A |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | Silicon NPN Planar RF Transistor |
| 中文描述： | 硅NPN平面射頻晶體管 |
| 文件頁數(shù)： | 2/9頁 |
| 文件大?。?/td> | 212K |
| 代理商： | BFP93A |
www.vishay.com
2
Document Number 85020
Rev. 1.4, 03-Sep-04
VISHAY
BFP93A / BFP93AW
Vishay Semiconductors
Electrical DC Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Collector-emitter cut-off current
Electrical AC Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Transition frequency
Test condition
Symbol
I
CES
I
CBO
I
EBO
V
(BR)CEO
Min
Typ.
Max
100
Unit
μ
A
nA
μ
A
V
V
CE
= 20 V, V
BE
= 0
V
CB
= 15 V, I
E
= 0
V
EB
= 2 V, I
C
= 0
I
C
= 1 mA, I
B
= 0
Collector-base cut-off current
100
Emitter-base cut-off current
10
Collector-emitter breakdown
voltage
Collector-emitter saturation
voltage
DC forward current transfer ratio V
CE
= 5 V, I
C
= 30 mA
12
I
C
= 50 mA, I
B
= 5 mA
V
CEsat
0.1
0.4
V
h
FE
40
90
150
Test condition
Symbol
f
T
Min
Typ.
6
Max
Unit
GHz
V
CE
= 5 V, I
C
= 30 mA,
f = 500 MHz
V
CB
= 10 V, f = 1 MHz
V
CE
= 10 V, f = 1 MHz
V
EB
= 0.5 V, f = 1 MHz
V
CE
= 8 V, Z
S
= 50
,
f = 800 MHz, I
C
= 5 mA
V
CE
= 8 V, Z
S
= 50
,
f = 800 MHz, I
C
= 25 mA
V
CE
= 8 V, Z
S
= 50
, Z
L
= Z
Lopt
,
I
C
= 25 mA, f = 800 MHz
V
CE
= 8 V, Z
S
= 50
, Z
L
= Z
Lopt
,
I
C
= 25 mA, f = 2 GHz
V
CE
= 8 V, I
C
= 25 mA,
d
IM
= 60 dB, f
1
= 806 MHz,
f
2
= 810 MHz, Z
S
= Z
L
= 50
V
CE
= 8 V, I
C
= 25 mA,
f = 800 MHz
Collector-base capacitance
C
cb
C
ce
C
eb
F
0.45
pF
Collector-emitter capacitance
0.2
pF
Emitter-base capacitance
1.25
pF
Noise figure
1.6
dB
F
2.1
dB
Power gain
G
pe
17
dB
G
pe
10
dB
Linear output voltage - two tone
intermodulation test
V
1
= V
2
260
mV
Third order intercept point
IP
3
31
dBm
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