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參數(shù)資料
| 型號： | BFP93AW |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | Silicon NPN Planar RF Transistor |
| 中文描述： | 硅NPN平面射頻晶體管 |
| 文件頁數(shù)： | 1/9頁 |
| 文件大?。?/td> | 212K |
| 代理商： | BFP93AW |
VISHAY
BFP93A / BFP93AW
Vishay Semiconductors
Document Number 85020
Rev. 1.4, 03-Sep-04
www.vishay.com
1
SOT-143
SOT-343
1
2
4
3
2
1
3
4
13579
Electrostatic sensitive device.
Observe precautions for handling.
Silicon NPN Planar RF Transistor
Features
High power gain
Low noise figure
High transition frequency
Applications
RF amplifier up to GHz range.
Mechanical Data
Typ:
BFP93A
Case:
SOT-143 Plastic case
Weight:
approx. 8.0 mg
Marking:
FE
Pinning:
1 = Collector, 2 = Emitter
3 = Base, 4 = Emitter
Typ:
BFP93AW
Case:
SOT-343 Plastic case
Weight:
approx. 6.0 mg
Marking:
WFE
Pinning:
1 = Collector, 2 = Emitter,
3 = Base, 4 = Emitter
Absolute Maximum Ratings
T
amb
= 25 °C, unless otherwise specified
Parameter
Collector-base voltage
Maximum Thermal Resistance
1)
on glass fibre printed board (25 x 20 x 1.5) mm
3
plated with 35
μ
m Cu
Test condition
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
j
T
stg
Value
20
Unit
V
Collector-emitter voltage
12
V
Emitter-base voltage
2
V
Collector current
50
mA
Total power dissipation
T
amb
≤
60 °C
200
mW
Junction temperature
150
°C
Storage temperature range
-65 to +150
°C
Parameter
Test condition
Symbol
R
thJA
Value
450
Unit
K/W
Junction ambient
1)
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| BFQ 19S E6327 | 功能描述:兩極晶體管 - BJT NPN Silicon RF TRANSISTOR RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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