- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄369460 > BFG93X (NXP Semiconductors N.V.) NPN 6 GHz wideband transistors(NPN 6G赫茲 寬帶晶體管) PDF資料下載
參數(shù)資料
| 型號： | BFG93X |
| 廠商： | NXP Semiconductors N.V. |
| 英文描述： | NPN 6 GHz wideband transistors(NPN 6G赫茲 寬帶晶體管) |
| 中文描述： | npn型6 GHz的寬帶晶體管（npn型第六代赫茲寬帶晶體管） |
| 文件頁數(shù)： | 3/16頁 |
| 文件大?。?/td> | 133K |
| 代理商： | BFG93X |
1998 Sep 23
3
Philips Semiconductors
Product specification
NPN 6 GHz wideband transistors
BFG93A; BFG93A/X
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1.
T
s
is the temperature at the soldering point of the collector pin.
THERMAL CHARACTERISTICS
Note
1.
T
s
is the temperature at the soldering point of the collector pin.
CHARACTERISTICS
T
j
= 25
°
C unless otherwise specified.
Note
1.
G
UM
is the maximum unilateral power gain, assuming S
12
is zero and
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
stg
T
j
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
total power dissipation
storage temperature range
junction operating temperature
open emitter
open base
open collector
65
15
12
2
35
300
+150
175
V
V
V
mA
mW
°
C
°
C
T
s
≤
85
°
C; note 1
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-s
thermal resistance from junction to soldering point
note 1
290
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
40
4.5
TYP.
90
0.9
1.9
0.6
6
16
MAX.
UNIT
I
CBO
h
FE
C
c
C
e
C
re
f
T
G
UM
collector leakage current
DC current gain
collector capacitance
emitter capacitance
feedback capacitance
transition frequency
maximum unilateral power
gain; note 1
I
E
= 0; V
CB
= 5 V
I
C
= 30 mA; V
CE
= 5 V
I
E
= i
e
= 0; V
CB
= 5 V; f = 1 MHz
I
C
= i
c
= 0; V
EB
= 5 V; f = 1 MHz
I
C
= i
c
= 0; V
CB
= 5 V; f = 1 MHz
I
C
= 30 mA; V
CE
= 5 V; f = 500 MHz
I
C
= 30 mA; V
CE
= 8 V; T
amb
= 25
°
C;
f = 1 GHz
I
C
= 30 mA; V
CE
= 8 V; T
amb
= 25
°
C;
f = 2 GHz
Γ
s
=
Γ
opt
; I
C
= 5 mA; V
CE
= 8 V;
T
amb
= 25
°
C; f = 1 GHz
Γ
s
=
Γ
opt
; I
C
= 5 mA; V
CE
= 8 V;
T
amb
= 25
°
C; f = 2 GHz
50
nA
pF
pF
pF
GHz
dB
10
dB
F
noise figure
1.7
dB
2.3
dB
G
UM
10
S
)
1
2
1
S
11
–
(
S
22
2
–
(
)
-------------------------------------------------------------- dB.
log
=
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BFG93 | NPN 6 GHz wideband transistors |
| BFP196T | Low Current Operation at 250 ，Low Reverse Leakage,Low Noise Zener Diode |
| BFP196TR | Low Current Operation at 250 ，Low Reverse Leakage,Low Noise Zener Diode |
| BFP196TW | Low Current Operation at 250 ，Low Reverse Leakage,Low Noise Zener Diode |
| BFP619 | Low Current Operation at 250 ，Low Reverse Leakage,Low Noise Zener Diode |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BFG94 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:NPN 6 GHz wideband transistor |
| BFG94,115 | 功能描述:射頻雙極小信號晶體管 TAPE-7 TNS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
| BFG94T/R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 12V V(BR)CEO | 60MA I(C) | SOT-223 |
| BFG97 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:NPN 5 GHz wideband transistor |
| BFG97,115 | 功能描述:射頻雙極小信號晶體管 NPN 15V 5.5GHZ RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。